bipolar junction transistor


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Related to bipolar junction transistor: Field effect transistor

bipolar junction transistor

[¦bī‚pōl·ər ‚jəŋk·shən tran′zis·tər]
(electronics)
A bipolar transistor that is composed entirely of one type of semiconductor, silicon. Abbreviated BJT. Also known as silicon homojunction.
References in periodicals archive ?
Most BGR use bipolar junction transistors (BJT) to easily reduce the temperature dependence, due to temperature coefficients, other common practice is the use of operational amplifiers (OP-AMP).
[6], is that not only the transistors, specially designed as the avalanche devices, but many bipolar junction transistors exhibit good performance in the avalanche breakdown region.
It offers a more in-depth understanding of the theory of RF power amplifiers and covers some topics that were barely mentioned previously, such as bipolar junction transistors (BJT) and others that deserve a more detailed treatment.
Thyristor and bipolar junction transistors (BJT) were the only power switches until the MOSFET was introduced in the late 1970s.
Operating in motor drives, DC/DC conversion, welding systems and power electronics, TranSiC's BITSIC-1220 and BITSIC-1206 NPN power bipolar junction transistors are made from silicon carbide.
While the same must be true for bipolar junction transistors, the effect is mitigated by the bipolar phenomenon of conductivity modulation, whereby operation in the saturation region causes the injection of minority carriers into the collector region, resulting in a commensurate injection of majority carriers to preserve charge neutrality.
SiGe bipolar junction transistors (BJT) are, in principle, bipolar transistors; the only difference is the presence of germanium in the base region, which reduces the band gap of the SiGe material.
This phenomenon, which is known as dispersion, may also occur in some HEMTs used in other materials systems as well as heterojunction bipolar transistors (HBT) and silicon bipolar junction transistors (BJT).
RF power amplifiers deployed with first-generation cellular base stations were based on cavity combiners and class C-operated silicon bipolar junction transistors for final-stage devices.
This characteristic is shown in Figure 6, which compares InP HBT direct-coupled amplifiers(5) with other technologies,(2,6-11) including GaAs- and SiGe-based bipolar junction transistors (BJT) and HBTs.