breakdown voltage


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breakdown voltage

[′brāk‚dau̇n ‚vȯl·tij]
(electricity)
The voltage measured at a specified current in the electrical breakdown region of a semiconductor diode. Also known as Zener voltage.
The voltage at which an electrical breakdown occurs in a dielectric.
The voltage at which an electrical breakdown occurs in a gas. Also known as breakdown potential; sparking potential; sparking voltage.

breakdown voltage

The voltage at which an electrical insulation ruptures, thereby destroying its insulating value and permitting current flow.
References in periodicals archive ?
One of the main indicators of the quality of the enameled wire is the breakdown voltage U.
After quenching, the reverse voltage across the SPAD is set back to the value exceeding the breakdown voltage by closing the switch [S.sub.U].
The test method of AC and DC breakdown voltage were in accordance with the IEC60156 (Insulating liquids-Determination of the breakdown voltage at power frequency-test method).
As an example, breakdown voltage of 0.125% of [SF.sub.6]-air is 1.5 times higher than that of pure air at the pressure of 4 bar.
The maximum breakdown voltage and its time of occurrence were then found from averaging 20 data points before the breakdown event.
Although already a widely known concept, one issue with RESURF structures was improving the robustness of the breakdown voltage. As shown in Figure 15, the robustness of the breakdown voltage of a RESURF layer is adversely affected by variations in the doping concentration used to form the layer (structure B and C).
In this paper, we study the temperature dependence of breakdown voltage and dark current of the mesa-type APD.
Figure 2 shows that the diode has a breakdown voltage between 80 and 140 V which is significantly low compared to the results reported elsewhere (>600 V, 1.2 kV, and 1.7 kV) [30, 31].
Compared to conventional silicon devices, SiC's improved electron mobility and high-temperature capability together with a high breakdown voltage appears to offer an ideal combination of features for power circuits.
We employ Lackner model approach to determine the temperature dependent breakdown voltage in order to improve the performance of 4H-SiC VJFET.
DC values of the peak electric field ([[xi].sub.p]), breakdown voltage ([V.sub.B]), and avalanche zone voltage ([V.sub.A]) drop can be evaluated by taking the time averages of time varying peak electric field ([[xi].sub.p](t)), diode voltage ([V.sub.t](t)), and avalanche zone voltage ([V.sub.a](t)) over a complete time period of steady-state oscillation (T = 1/ f; where f is the fundamental frequency of steady-state oscillation).
The SMP6LLC05-2P--SMP6LLC12-2P series consists of three TVS array components offered with three varying minimum breakdown voltages. The SMP6LLC05-2P has a minimum breakdown voltage of 6.0V while the SMP6LLC6.5-2P and SMP6LLC12-2P provide minimum breakdown voltages of 7.2V and 13.3V respectively.