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His team is now focusing on developing a memory technology that can not only store information like conventional memory but also perform computing like a microprocessor at the same time.
Several types of memory cells will be measured, Ranging from conventional memory cells such as sram to more advanced memory cells such as pcm (phase change memory).
Known as 3D XPoint (cross point), the technology was described as being up to 1,000 times faster and have up to 1,000 times more endurance than NAND flash, with 10 times the storage density of conventional memory.
In conventional memory units, each bit -- the smallest unit of information -- is represented by a microscopic dot on a microchip.
So the role of memristor as a new memory structures, different than conventional memory hierarchy can be used to get more power efficiency.
A new, longer-lasting memory architecture created by Intel and Micron Technology claims to be up to 1,000 times faster than flash and is 10 times denser than conventional memory. The developers are hailing the innovation as the first new memory category since the introduction of NAND flash in 1989.
HMC also requires 70 percent less energy to transfer data while offering a small form factor just 10 percent of the footprint of conventional memory.
It also requires 70 percent less energy to transfer data while offering a small form factor - just 10 percent of the footprint of conventional memory, it said.
They also require 70% less energy to transfer data while offering a small form factor, 10% of the footprint of conventional memory.
“Unlike pillows of conventional memory foam, DACRON[R] Memorelle[TM] fiberfill adjusts more easily to your preferred sleeping position.”
This compares to conventional memory where data retrieval takes place by addresses within the memory.
This allows for much faster operation and uses much less energy compared to conventional memory storage.

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