Claus, "Analysis of one-dimensional photonic band gap structures with a liquid
crystal defect towards development of fiber-optic tunable wavelength filters," Optics Express, Vol.
The company's GaN on GaN technology leverages the advantages of the native substrate, including over a thousand times lower
crystal defect densities that allow reliable operation at very high current densities (the same principle that enabled Blu-ray laser diodes).
However, fine particles of titanium oxide often develop
crystal defect, resulting in lower efficiency in the use of light and lower photocatalytic activity.
The company's GaN-on-GaN technology leverages the advantages of the native substrate, including lower
crystal defect densities (by more than a thousand times), which allow reliable operation at very high current densities, the same principle that enabled Blu-ray laser diodes.
These wafers, with high surface smoothness and low
crystal defect, are being produced at SDK's Chichibu Plant in Saitama Prefecture.
semiconductor layer on the grating with no
crystal defect.
SDK's SiC epitaxial wafer business has been achieving growth rate higher than that of the market because manufacturers of power devices appreciate the lowest incidence of
crystal defects and the highest homogeneity of wafers in the world which SDK's HGE achieved.
For instance, although a method known as electron-beam induced current, which analyzes samples using the beam of an electron microscope, provides data on nanoscale variations in solar cell efficiency, it gives little information on the underlying
crystal defects and impurities that degrade efficiency.
As MOSFET's oxide film, formed on the surface of an epitaxial wafer, is used in device operations, finer surface defect (SD) and various types of
crystal defects, including basal plane dislocation (BPD), considerably affect the yield and product quality.
The authors have organized the main body of their text in eleven chapters devoted to mechanical and fracture properties of solids,
crystal defects and disorder in lattice models, nucleation and extreme statistics in brittle fracture, and a wide variety of other related subjects.
However, the effect of milling operations, a large number of
crystal defects in mixed network presents Yd.
increased ON resistance, forward voltage, and resistance deterioration) and premature failure of the gate oxide film by improving processes related to
crystal defects and device structure, reducing ON resistance per unit area by about 30% over conventional products.
