However, fine particles of titanium oxide often develop
crystal defect, resulting in lower efficiency in the use of light and lower photocatalytic activity.
The company's GaN on GaN technology leverages the advantages of the native substrate, including over a thousand times lower
crystal defect densities that allow reliable operation at very high current densities (the same principle that enabled Blu-ray laser diodes).
These wafers, with high surface smoothness and low
crystal defect, are being produced at SDK's Chichibu Plant in Saitama Prefecture.
The company's GaN-on-GaN technology leverages the advantages of the native substrate, including lower
crystal defect densities (by more than a thousand times), which allow reliable operation at very high current densities, the same principle that enabled Blu-ray laser diodes.
semiconductor layer on the grating with no
crystal defect.
Imec and Ghent University overcame these structural differences and largely suppressed the detrimental
crystal defects that typically form at the interface between silicon and indium phosphide.
As MOSFET's oxide film, formed on the surface of an epitaxial wafer, is used in device operations, finer surface defect (SD) and various types of
crystal defects, including basal plane dislocation (BPD), considerably affect the yield and product quality.
However, the effect of milling operations, a large number of
crystal defects in mixed network presents Yd.
increased ON resistance, forward voltage, and resistance deterioration) and premature failure of the gate oxide film by improving processes related to
crystal defects and device structure, reducing ON resistance per unit area by about 30% over conventional products.
They cover configuration and conformation of macromolecules in polymer crystals, the packing of macromolecules in polymer crystals, determining crystal structure from X-ray diffraction, defects and disorder in polymer crystals, analyzing diffuse scattering from disordered structures of polymers, crystal habits, and the influence of
crystal defects and structural disorder on the physical and mechanical properties of polymeric materials.
In addition, by improving processes and device structures related to
crystal defects ROHM was able to overcome all problems related to reliability, including that of the body diode.
Among specific topics are analyzing heterogeneous iron precipitation in multi-crystalline silicon, semi-insulating silicon for microwave devices, vacancies and self-interstitial dynamics in silicon wafers, optimizing silicon ingot quality by the numerical predicting of bulk
crystal defects, dislocation states and deformation-induced point defects in plastically deformed germanium, hydrogenation in crystalline silicon materials for photovoltaic applications, characterizing semiconductor films epitaxially grown on thin metal oxide buffer layers, the scaling of quantum transport in silicon nano-transistors, and optimizing luminescence properties in silicon diodes produced by implantation and annealing.
