dangling bond


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dangling bond

[¦daŋ·gliŋ ′bänd]
(solid-state physics)
A chemical bond associated with an atom in the surface layer of a solid that does not join the atom with a second atom but extends in the direction of the solid's exterior.
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References in periodicals archive ?
Oshiyama, "Magnetic ordering of dangling bond networks on hydrogen-deposited Si(111) surfaces," Physical Review Letters, vol.
Olefin additions on H-Si (111): Evidence for a surface chain reaction initiated at isolated dangling bonds. Langmuir.
As overcoat of the hard disk surface contains dangling bond, when functional beads come closer to the DLC surface, the functional beads experience higher attraction force compared to the other nonfunctional beads of the same lubricant molecule.
Besides, the grain size is bigger with a lower dangling bond density that contributes to the absorption loss in polysilicon material.
The researchers could furthermore make the sloping effect disappear completely when the dangling bond is reacted with TEMPO and reappear when TEMPO is removed.
The better a-Si:H/c-Si interface passivation with an increase in i-layer H content could decrease the interface defect (dangling bond) density and recombination for carriers that overcome the a-Si:H/c-Si barrier, and thus could be the reason for the increase in [V.sub.oc] with an increase in i-layer H content [20].
After MMT is added into epoxy matrix, the nanoscale MMT sheets attract many epoxy molecules into the inter-sheet spaces and combine with them by their high surface energy and the large numbers of surface dangling bonds. During the subsequent process of being compounded with basalt fibers, the MMT can readily infiltrate into basalt fiber bundles and adsorb onto basalt fiber surfaces, as its high surface energy and its similar structure and polarity to basalt fibers make its affinity with basalt fibers exceed that between basalt fibers.
The dangling bonds at the ends of the tubes were saturated by hydrogen atoms.
Therefore, the occurrence of VC defects causes significant changes in the electrical conductivity of Si crystals because the dangling bonds, floating bonds, and high-strain atoms surrounding defects generate a defect level.
The generation of point defects before the damage appeared is mainly due to that the UV irradiation can break the silicon oxygen bonds or the dangling bonds on the fused silica surface.
A thermal oxide layer has been considered a good candidate material for reducing surface dangling bonds [15], while amorphous silicon nitride with hydrogen, that is, SiNx:H, has proven a good surface passivating counterpart [16, 17].