depletion region


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depletion region

[də′plē·shən ‚rē·jən]
(electronics)
The portion of the channel in a metal oxide field-effect transistor in which there are no charge carriers.

depletion region

In a transistor, the area where P-type silicon (holes) and N-type silicon (excess electrons) meet. See depletion mode.
References in periodicals archive ?
When the RH levels increase above 60%, then also on top of chemisorbed layers water is sorbed physically and both the Schottky barrier and the depletion region width increase (Figure 4(d)).
Integrating (7) over depletion region of channel-source P-N junction assuming xd as the depletion thickness, we get
Integrating Poisson's equation across the width of the depletion region, [W.sub.C] gives
Thus, the measured width which is presented in Figure 3(a) indicated the effective depletion region width of the device [10].
It is shown that the breakdown sites revealed by EL at small reverse bias in breakdown regime 1 can be associated with Al spikes located inside the depletion region. Breakdowns revealed by EL at larger bias in accordance with previous investigations correlate well with extended defects in the EBIC and LBIC images and can be associated with small precipitates formed on the random grain boundaries.
The photovoltage generated across the p-n junction depletion region has no effect on the detector characteristics.
It is found that the depletion should be extend more, but high drain doping limits the depletion region consequently enhance the punch through voltage.
The recombination current density in the depletion region can be expressed as [17]
The large value of n suggests that in this voltage region, the recombination in these devices occurs primarily in the junction depletion region and at the junction interface.
2) In the junction limit, the density of carriers in excess is cancelled by the electric field in the depletion region:
For example, the question for M4 was "How is a diode's depletion region produced?", and the two possible answers are "Majority carriers in the P- and N-type semiconductors produce a diode's depletion region" and "Minority carriers in the P- and N-type semiconductors produce a diode's depletion region." In the prediction phase of the POE conceptual-change strategy, a learner needs to answer the question and is encouraged to deliberate any critical point affecting misconceptions about the observation activities.
According to the gated-diode measurements, the surface recombination velocity and the minority carrier lifetime ([[tau].sub.FIJ]) in the field-induced depletion region were extracted.