The NCA, NCB, NCC, NCD and NCE devices are available with a combination silicon dioxide/silicon nitride dielectric, or, for critical microwave or high-frequency applications in which low dielectric absorption
is required, with a silicon dioxide dielectric.
New instrumentation, such as the S630 parametric test system from Keithley Instruments Inc., Cleveland, uses a remote picoammeter front-end, per-pin design and an advanced probe card to achieve low levels of parasitic dielectric absorption
The position of this maximum in the microwave range of frequency indicates that we are dealing with a dielectric absorption of the Debye type.
The position of the maximum suggests that is a dielectric absorption of the Debye type; the location of the maximum is different than that for free water (f = [10.sup.10] Hz at 298 K).
Automatic calculation of Dielectric Absorption
and Polarization Index with no setup
The low dielectric absorption
resulting in the waveform distortion rate (attenuation of the noise) in Figure 2 (a) and impedance and ESR versus frequency characteristics in Figure 2 (b) shows CFCAPs compare very favorably with film-chip capacitors and greatly improved (more than 30 dB lower) over barium titanate MLCCs.
* Speed limitations The high dielectric absorption
and parasitic capacitance of many switch matrix designs limit test throughput at low current levels because of the time required for the matrix to settle to a steady state.
Effects such as dielectric absorption
can increase settling time from milliseconds to minutes.