The transfer characteristics of MOSFET exemplify that the diffusion current governs the subthreshold region, while the drift current dominates in the linear-saturation region.
Figure 1 represents the 10 nm test device simulation results of drift current and diffusion current components versus gate voltage ([V.sub.GS]) for [V.sub.DS] = 0.1 V.
The drift-diffusion model (DDM) states that the total current across the channel is the sum of drift current and diffusion current as  [I.sub.total] = [I.sub.DRIFT] + [I.sub.DIFFUSION.] The DDM and even the Landauer approach (Boltzmann transport equation) in ballistic, quasi-ballistic nano-MOSFET models advocate that with the source and drain terminals grounded ([V.sub.DS] = 0V), the total current flow is zero because of the zero potential drop across the terminals.
Diffusion current is a type of current in a semiconductor instigated by the variance of charge carrier concentration (holes and/or electrons), whereas the drift current is due to the transport of charge carriers prompted by an electric field force exerted on them.
These components are the majority carriers' electron drift current and diffusion current as well as the minority carriers' hole drift current and diffusion current.
From (13), one can observe that when zero input voltage ([V.sub.IN]) is observed, the drift current entirely balances the diffusion current.
[I.sub.DRIFT](x) as drift current contribution and [I.sub.DIFFUSION](x) as the diffusion current contribution at point x.
Consequently, in this state, we can further conclude that the drift current totally balances the diffusion current; that is, the drift current value is exactly equivalent to the diffusion current value but with the contrary direction.
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