Also, one can estimate the drift mobility
of the ions [mu] from the time-of-flight of the ions between the electrodes of the MOM stacks [tau] determined from the kinetics of charging due to the ion migration polarization when applying a bias voltage between the electrodes .
Key words: Solgel method, Pr, Cubic spinel Ferrites, DC resistivity, Drift mobility, Dielectric properties.
In this study, we synthesized Ni2+ and Pr3+ substituted derivatives of in spinel ferrites materials by using the Sol-Gel method to investigate the effect of substitution of Ni2+ and Pr3+ at octahedral site in order to observe changes in electrical properties, such as, Dc resistivity, drift mobility, dielectric constant and dielectric loss.
According to the conduction mechanism in ferrites, the decrease in resistivity could also be related to the increase in the drift mobility of the thermally activated electrons [39, 40].
better electron mobility at a given power dissipation as mobility and drift mobility
decrease with temperature and also better carrier transport thanks to lower scattering rates.
Based on the bulk-limited conduction mechanisms, some important electrical properties in the dielectric films can be extracted, including the trap energy level, the trap spacing, the trap density, the electronic drift mobility, and the dielectric relaxation time, the density of states in the conduction band.
where [mu] is the electronic drift mobility, [N.sub.C] is the density of states in the conduction band, q[[phi].sub.T] (=[[PHI].sub.T]) is the trap energy level, and the other notations are the same as defined before.
Besides the trap energy level and the optical dielectric constant, the electronic drift mobility in dielectric films can also be extracted by the analyses of P-F emission.
He has co-authored several publications including “Determination of Drift Mobility
and Lifetime for Dominant Change Carriers in Polycrystalline CuInSe2 by Photomixing,” “Effects of Deposition Conditions on Transport Properties of Intrinsic Hydrogenated Amorphous Silicon Carbide Investigated by the Photomixing Technique,” and “Structural Studies of Tungstate-Tellurite Glasses by Raman Spectroscopy and Differential Scanning Calorimetry.” Dr.
The decrease in drift mobility
with temperature at low fields is due to increased intra-valley polar optical phonon scattering whereas the decrease in velocity at higher fields is due to increased intra and inter valley scattering.
Krumm, "Simple Method of Measuring Drift Mobility
Profiles in Thin Semiconductor Films," Electronics Letters, May 1975, Vol.
(6), replotted the data by Pfister (7) for drift mobility
([Mu]) in the system triphenylamine/polycarbonate (TPA/PC) as a function of the weight ratio (x) in log [Mu] vs.