edge dislocation

edge dislocation

[′ej ‚dis·lō‚kā·shən]
(crystallography)
A dislocation which may be regarded as the result of inserting an extra plane of atoms, terminating along the line of the dislocation. Also known as Taylor-Orowan dislocation.
References in periodicals archive ?
More complex is instead the interaction with the dislocation; thinking for simplicity one edge dislocation, for instance, the local lattice distortion due to stress field of the extra-plane affects the path of the ions between the electrodes depending on the orientation of the Burgers vector with respect to the applied electric field.
actually inferred in [9]: the interaction of the charge carrier with the stress field of one edge dislocation defines an effective diffusion coefficient [D.
In the case of edge dislocation the shear stress component on a plane at distance [gamma] above the slip plane is known to be [[sigma].
15]: the figure 2A shows the cross section of the stretched zone of an edge dislocation, the fig.
The chance that light atoms line up into the strained zone of an edge dislocation is interesting for its implications in the case of mixed conductivity in ceramic electrolytes.
it suggests the specific displacement mechanism that involves the tunnelling of ions throughout the stretched zone of an edge dislocation at its boundary with the perfect lattice.
The experimental situation described in this section, in principle possible, is the one of a unique edge dislocation crossing throughout the single crystal ceramic electrolyte and arbitrarily inclined with respect to plane parallel electrodes.
tu] the energy of the ion travelling the tunnel along the stretched zone of the edge dislocation and [[epsilon].
tu] even if L corresponds to just a few lattice sites aligned to form the extraplane of the edge dislocation, i.
considering an edge dislocation that crosses through a test grain average size of the typical order of 1 [micro]m, one finds a gap [delta][epsilon] = [v.
The high tensile load produces plastic flow due to movement of edge dislocation with Cottrell atmosphere such that the edge dislocation separates from the enclosed interstitial solutes.
Some paper subjects are defect analysis in semiconductor materials based on p-n junction diode characteristics, electronic structure and doping effects of Ni and Co on a kink in the edge dislocation of BCC iron, peculiarities of discontinuous precipitation in the Pb-Sn alloy, and local vibrational modes of Zn-H-P in GaP, InP, and ZnTe.