# electrical thickness

## electrical thickness

[i′lek·trə·kəl ′thik·nəs]
(oceanography)
The vertical measure between the surface of an ocean current and an isokinetic point having a value of about one-tenth the surface speed.
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.
References in periodicals archive ?
Its value is not known a priori, but is related to the electrical thickness of the sample.
This choice is justified by computing the electrical thickness of the iris using [lambda] = [[lambda].sub.0]/R{[square root of [[mu].sub.r][[epsilon].sub.r]]} from the extracted values of [[mu].sub.r] and [[epsilon].sub.r], producing the result shown in Figure 15.
Figure 20 also shows the electrical thickness of the insert found using [lambda] = [[lambda].sub.0]/R{[square root of [[mu].sub.r][[epsilon].sub.r]]} from the extracted values of [[mu].sub.r] and [[epsilon].sub.r].
Electrical thickness and power balance for a waveguide iris in X-band waveguide.
Electrical thickness and power balance for a metamaterial waveguide insert.
For numeric simulation the structure with M = 25 layers was chosen, permittivity of layers was [[epsilon].sub.2n] - 1 = 2 and [[epsilon].sub.2n] = 1, respectively, and permeability was [[mu].sub.2n] - 1 = 1, [[mu].sub.2n] = 1, electrical thickness of layers was [h.sub.n] [square root of [[epsilon].sub.n]] = [[lambda].sub.0]/4.
At the edges of the reflection frequency band, the center mass delay gains large value, much greater than the propagation time of packet for the free-space distance which is equal to the electrical thickness of the structure (Figure 6(a), line 1).
Now let us consider the pulse distortion with the [pi]-cosinusoidal envelope and absolute duration a = 10 (ns) for the reflection from the given structure with chirp variation of thickness of the "period" in the directions toward the increase (Figures 7(a)--(d), line 1) and decrease (Figures 7(a)-(d), line 2) of the electrical thickness of the "period".
The pulse GD for reflection from the Bragg structure with small chirp variation of an electrical thickness of the "period" either monotonically increases or monotonically decreases (in the center of Bragg reflection band), similar to the CMD for such a structure.
For example, gate dielectrics in advanced semiconductors can have thickness dimensions of less than one nanometer; the performance of these dielectrics can only be predicted by evaluating their equivalent electrical thickness. Similar considerations apply to carbon nanotubes (CNTs) and silicon wires, which are the basis for many nanotech innovations.
The electrical thickness is independent of polarization and is given by
These include the effective electrical thickness of oxides, mobile charge, and surface charge.
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