electron avalanche


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electron avalanche

[i′lek‚trän ′av·ə‚lanch]
(electronics)
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The first several chapters discuss the basics of photoionization, mechanisms of electron avalanche multiplication, engineering of position and time sensitivity, selection of appropriate gas vapor, liquid and solid photocathodes, and specific materials including cesium salts.
3] Pa), resulting in resonant electron avalanche between the inner metal surfaces of a component.
What's new here is that the same electron avalanche likely responsible for the gamma-ray emission also produces the VLF radio bursts, and this gives us a new window into understanding this phenomenon," said Joseph Dwyer, a physics professor at the Florida Institute of Technology in Melbourne, Fla.
Hence, it can be concluded that the occurrence of the sparking can be due to the electron avalanche and high temperature (at least 2500[degrees] C) into the pores of the coating.
Their topics include the bulk growth of MCT, properties of Cd(Zn)Te relevant to use as substrates, the liquid-phase epitaxy, mechanical and thermal properties, band structure and related properties, extrinsic doping, photovoltaic infrared detectors, and electron avalanche photo-diodes.
Chapters are in sections on IR detection performance criteria, IR detector materials, intrinsic direct bandgap semiconductors, HgCdTe as the material of choice for tactical systems, uncooled detection, HgCdTe electron avalanche photodiodes, and future HgCdTe developments.
Multipaction, short for multiple impacts, is an electron avalanche phenomena discovered in the 1920s by the pioneers of early high-frequency vacuum tubes.
Then, the process quickly sparks an electron avalanche vaporizing everything within the laser spot.
A discharge occurs when free electrons within the gap are accelerated by the field, strike the surfaces and initiate an electron avalanche by the release of secondary electrons, as shown in Figure 1.
A voltage source, collected from energy in the ambient air, can cause a high electric field between those parallel plates, resulting in an electron avalanche that then causes electron multiplication.
3 million contract to develop and demonstrate a new near-mid wavelength infrared active detection receiver system based on the company's unique Mercury Cadmium Telluride (HgCdTe) electron avalanche photodiode (e-APD) focal plane array (FPA) technology.
In 2004 the MSS recognized DRS' unique Electron Avalanche Photodiode (EAPD) technology and presented the company with its prestigious Herschel Award.

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