electron avalanche


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electron avalanche

[i′lek‚trän ′av·ə‚lanch]
(electronics)
References in periodicals archive ?
The company's HgCdTe Electron Avalanche Photodiode technology is creating new opportunities through its incorporation into emerging Department of Defense applications, such as 3D Imaging LADAR (three-dimensional imaging laser radar) for improved target identification at longer ranges.
In 2004, the company received a second Herschel Award in recognition of its Mercury Cadmium Telluride (HgCdTe) Electron Avalanche Photodiode (APD) technology, used in advanced infrared imaging applications for the Department of Defense.
The system will be based on the company's unique Mercury Cadmium Telluride (HgCdTe) electron avalanche photodiode (e-APD) focal plane array (FPA) technology.
In 2004 the MSS recognized DRS' unique Electron Avalanche Photodiode (EAPD) technology and presented the company with its prestigious Herschel Award.
3 million contract to develop and demonstrate a new near-mid wavelength infrared active detection receiver system based on the company's unique Mercury Cadmium Telluride (HgCdTe) electron avalanche photodiode (e-APD) focal plane array (FPA) technology.
Then, the process quickly sparks an electron avalanche vaporizing everything within the laser spot.
A voltage source, collected from energy in the ambient air, can cause a high electric field between those parallel plates, resulting in an electron avalanche that then causes electron multiplication.
What's new here is that the same electron avalanche likely responsible for the gamma-ray emission also produces the VLF radio bursts, and this gives us a new window into understanding this phenomenon," said Joseph Dwyer, a physics professor at the Florida Institute of Technology in Melbourne, Fla.
Hence, it can be concluded that the occurrence of the sparking can be due to the electron avalanche and high temperature (at least 2500[degrees] C) into the pores of the coating.
Their topics include the bulk growth of MCT, properties of Cd(Zn)Te relevant to use as substrates, the liquid-phase epitaxy, mechanical and thermal properties, band structure and related properties, extrinsic doping, photovoltaic infrared detectors, and electron avalanche photo-diodes.
Chapters are in sections on IR detection performance criteria, IR detector materials, intrinsic direct bandgap semiconductors, HgCdTe as the material of choice for tactical systems, uncooled detection, HgCdTe electron avalanche photodiodes, and future HgCdTe developments.

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