electron mobility


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electron mobility

[i′lek‚trän mō′bil·əd·ē]
(solid-state physics)
The drift mobility of electrons in a semiconductor, being the electron velocity divided by the applied electric field.
References in periodicals archive ?
Mimura will be receiving this award in the field of electronics in the Advanced Technology category for his contributions to the advancement of ICT made through his invention and development of the high electron mobility transistor (HEMT).
Its electron mobility is 20-50 times faster than the MacBook Pro's current display material.
This is a signature of electron transport over the characteristic length-scales typically probed by electrical measurements being significantly affected by scattering by structural defects introduced during growth, and a trait of a much larger electron mobility at the nanoscale.
Its high thermal conductivity, high breakdown field, and high electron mobility make it beneficial for use in computers or other devices that operate at high temperatures and high voltages.
Knezevic Electron mobility in silicon nanowires" IEEE Transactions On Nanotechnology 6(1): 113- 117(2007)
They also typically use fullerenes as the acceptor material due to its high electron mobility and inherent talent for accepting stable electrons.
The 3DTDS we have found has a lot in common with graphene and is likely to be as good or even better in terms of electron mobility -- a measure of both how fast and how efficiently an electron can move through a material," Yulin Chen of Oxford University said.
A 3DTDS is a natural three-dimensional counterpart to graphene with similar or even better electron mobility and velocity," Yulin Chen said.
Other topics include morphology optimization of very thick epitaxial layers, nickel oxide as a dielectric for GaN and SiC devices, multi-wire electrical discharge slicing, and the impact of AIN spacer thickness on electron mobility.
Kawasaki, Japan, June 20, 2012 - (JCN Newswire) - Fujitsu Laboratories today announced that it has successfully developed the world's first single-chip transceiver using gallium nitride (GaN)(1)high electron mobility transistor (HEMT)(2) technology that features an output of 6.
These amplifiers best operate in combination with the MGF4921AM, Mitsubishi Electric's low noise gallium arsenide (GaAs) high electron mobility transistor (HEMT) already available for the first stage of amplifying.
According to Strategy Analytics, both MOCVD (metal organic chemical vapor deposition) and MBE (molecular beam epitaxy) epitaxial substrates will continue to be used for the production of HBT (heterojunction bipolar transistor) and HEMT (high electron mobility transistor) devices.

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