electron trap

electron trap

[i′lek‚trän ‚trap]
(solid-state physics)
A defect or chemical impurity in a semiconductor or insulator which captures mobile electrons in a special way.
References in periodicals archive ?
Garlick, GFJ, Gibson, AF, "The Electron Trap Mechanism of Luminescence in Sulphide and Silicate Phosphors.
All detectors are equipped with an optimized electron trap, which supports interference-free x-ray detection, even at very low excitation energies.
Recombination at this trap should give red luminescence, while the orange luminescence band at higher temperatures should be caused by a recombination of released holes at some electron trap near [Mn.
All detectors are equipped with an optimised electron trap, which supports interference-free x-ray detection, even at very low excitation energies.
To significantly reduce the background signal from incoherently scattered electrons, the film is mounted over an electron trap so that the electrons penetrating through the particles also penetrate the film and are absorbed in the trap.
For MIS type GaN power transistors, the issue was that a hysteresis attributed to electron traps within the gate insulator was often observed in the drain current characteristics resulting in a variation of the threshold voltage.
By introducing small chlorine atoms immediately after synthesising the dots, we're able to patch the previously unreachable nooks and crannies that lead to electron traps," explained doctoral student and lead co-author Alex Ip.
Although the OmegaMax technology supports the use of larger sensors (up to 30 mm2) either individually or in arrays of up to four sensors, one of the practical benefits is that it permits the use of smaller detectors with smaller electron traps, packaged in smaller cases that can be placed closer to the specimen without image distortion and with good resolution at higher counting rates.
In insulating materials, stresses and strains may also be responsible for the creation of lattice defects, some of them acting as electron traps responsible for electrostatic phenomena during electron irradiation.
In this paper, noise measurements resulting in the characterization of electron traps apparent in identical device structures built on the two different buffer layers, LT and SL, are presented.
By introducing small chlorine atoms immediately after synthesizing the dots, we're able to patch the previously unreachable nooks and crannies that lead to electron traps.

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