energy band


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energy band

[′en·ər·jē ‚band]
(analytical chemistry)
References in periodicals archive ?
Particularly crystalline semiconductors with definite energy band gap are required in developing various electronic devices.
In a degenerate semiconductor, such as Ti[O.sub.2] anatase, the energy band gaps represent the shift in Fermi level.
Since generalized gradient approximation (GGA) considers the effect of charge density near a certain location on the exchange-correlation energy, for example, taking into account the effect of the first-order gradient of density to correct local variations, it is possible to properly correct the effects of charge density regions exponential form; in the geometric optimization, energy band and density of state calculations have achieved good results [13].
Figure 2(a) shows the components of the recombination current when the junction is forward biased and Figure 2(b), the corresponding energy band diagram.
The direct energy band gap ([E.sub.g]) can be obtained when n = 2.
According to the work flow chart of this paper, the basis of the O(N) TBMD technique that we used and the electronical calculations on the energy band gaps of the optimized pristine/vacancy defected SWCNTs are explained in Section II.
The energy band gap value of the prepared films decreased from 1.83 to 1.75 against absorbed dose.
where [I.sub.0] is initial X-ray intensity, I is final X-ray intensities, r means different narrow energy bands, k denotes different materials, [E.sub.r] is the energy of the rth narrow energy band, S([E.sub.r]) means the weighted coefficient of the rth narrow-energy-width X-ray image, [u.sub.rk] is a linear attenuation coefficient depending on the kth material being traversed by the X-ray and the energy level of the rth narrow-energy-width band, and the distance the X-ray traverses through the kth material is denoted as [d.sub.k] [18].
Because of these different phases, the energy band gap of [Cu.sub.x]S thin films varies between 1.26 and 2.54 eV [10-15].
Caption: FIGURE 3: Schematics of avalanche breakdown mechanism of APD with simplified energy band diagram at the reverse voltage of [absolute value of (V)] > [absolute value of ([V.sub.br])].
Usually, these devices use a CdS thin film as buffer layer in their structure; this layer improves mechanical heterojunction between absorbent layer and TCO; however CdS depicts environmental hazards during manufacture of the layers; besides, this material has a small forbidden energy band gap ([E.sub.g] = 2.4 eV); this low-energy band gap reduces photocurrent at wavelengths near the ultraviolet region, and this incomplete absorption of the visible spectrum for CdS buffer layers is considered to be responsible for the drop in quantum efficiency of chalcopyrite-based solar cells [4-6].
Pulsars [1], which are recognized as rotating neutron stars, can emit regular signals from the radio to the high energy band [2].