enhancement-mode high-electron-mobility transistor

enhancement-mode high-electron-mobility transistor

[en′hans·mənt ¦mōd ′hī i¦lek‚trän mō¦bil·əd·ē tran′zis·tər]
(electronics)
A high-electron-mobility transistor in which application of a positive bias to the gate electrode is required for current to flow between the source and drain electrodes. Abbreviated E-HEMT.
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.
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