enhancement-mode junction field-effect transistor

enhancement-mode junction field-effect transistor

[en′hans·mənt ¦mōd ′jəŋk·shən ′fēld i‚fekt tran′zis·tər]
(electronics)
A type of gallium arsenide field-effect transistor in which the gate consists of the junction between the n-type gallium arsenide forming the conducting channel and p-type material implanted under a metal electrode. Abbrevate E-JFET.
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