extreme ultraviolet


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extreme ultraviolet

(XUV; EUV) The region of the electromagnetic spectrum bridging the gap between ultraviolet radiation and X-rays. See XUV astronomy.
References in periodicals archive ?
The announcement last week of the formation of a private industry consortium called the Extreme Ultraviolet Limited Liability Company marked the launch of a major project aimed at developing the technology needed to etch circuit lines less than 0.10 [micro]m wide.
The video clip covers a little over a day of activity viewed in extreme ultraviolet light.
Welsh of NASA headquarters and his colleagues have used ultraviolet data from two orbiting observatories, ROSAT and the Extreme Ultraviolet Explorer, to map the contours of a huge void in space that extends about 600 light-years across, well beyond the solar system.
The fourth edition reflects developments in extreme ultraviolet lithography, line-edge roughness, multi-beam mask writers, and immersion lithography.
South Korea's Yonhap News agency reported, citing unnamed officials, that Samsung Electronics Co had applied for approval of the material, photoresist used in its extreme ultraviolet fabrication line.
As the official website notes, the Exynos 9825 is the industry's first mobile processor built with 7nanometer EUV (extreme ultraviolet lithography) processing technology for faster and more power-efficient performance.
TSMC will use 7nm Extreme UltraViolet (EUV) process (called N7+), along with the Flip-Chip Package-on-Package (FC-PoP) process that allows vertical stacking of transistors.
TSMC announced its 6-nanometer process, which it says provides a "significant enhancement of its industry-leading N7 technology and offers customers a highly competitive performance-to-cost advantage as well as fast time-to-market with direct migration from N7-based designs." In a statement, TSMC said: "By leveraging the new capabilities in extreme ultraviolet lithography gained from the N7+ technology currently in risk production, TSMC's N6 process delivers 18% higher logic density over the N7 process.
TSMC will be using its Extreme Ultraviolet Lithography (EUV) technology to build the 5nm chipset.
McPherson's Model 251MX high-energy flat-field spectrograph delivers excellent performance in water window imaging, HHG laser spectroscopy, x-ray plasma diagnostics, extreme ultraviolet lithography, optical characterisation, metrology and calibration.
The tapeout project, geared toward advancing 3-nm chip design, was completed using extreme ultraviolet (EUV) and 193 immersion (193i) lithography-oriented design rules and the Cadence Innovus implementation system and Genus synthesis solution, imec utilized a common industry 64-bit CPU for the test chip with a custom 3-nm standard-cell library and a TRIM metal flow, where the routing pitch was reduced to 21 nm.

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