floating-gate avalanche-injection metal-oxide semiconductor device

floating-gate avalanche-injection metal-oxide semiconductor device

[¦flōd·iŋ ¦gāt ¦av·ə‚lanch in¦jek·shən ¦med·əl ¦äk‚sīd ‚sem·i·kən′dək·tər di‚vīs]
(electronics)
An erasable programmable read-only memory chip that holds its contents until they are erased by ultraviolet light. Abbreviated FAMOS device.
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