gallium arsenide semiconductor

gallium arsenide semiconductor

[¦gal·ē·əm ¦ärs·ən‚īd ′sem·i·kən‚dək·tər]
(solid-state physics)
A semiconductor having a forbidden-band gap of 1.4 electronvolts and a maximum operating temperature of 400°C when used in a transistor.
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.
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Filtronic Plc has concluded a 13m pound ($20.8m) cash acquisition of Fujitsu's semiconductor facility in the northeast of England, and negotiated a 5m pound ($8m) government grant to establish a 6 inch gallium arsenide semiconductor (GaAs) production operation at the plant.
To make gallium arsenide semiconductor wires, the researchers fill the glass capillaries with a liquid gallium compound.
Putting gallium arsenide semiconductor circuits atopa silicon base is a bit like mating a Ferrari with a Honda.