gallium nitride


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gallium nitride

An alloy of gallium and nitrogen (GaN) that is used in semiconductor devices for lasers and LEDs, including blue lasers. Gallium nitride has the thermal and chemical stability required in laser applications. See gallium arsenide.
References in periodicals archive ?
ResearchMoz.us include new market research report "Global Gallium Nitride Semiconductor Devices Market 2012-2016" in its huge collection of research reports.
Fujitsu will continue with development for further advancements of gallium nitride (GaN) HEMTs for next-generation high-speed wireless communication.
Gallium nitride (GaN) semiconductor materials are employed in a wide range of applications including video displays, solid-state lighting, and high-definition DVD players and, according to Piprek (director, NUSOD [Numerical Simulation of Optoelectric Devices] Institute), high demand is likely to mean a growing importance for physics-based nitride device modeling and simulation.
David Follstaedt, led a team of researchers at Sandia National Laboratories, Albuquerque, N.M., in the development of the Cantilever Epitaxy and Growth of Low-Dislocation Gallium Nitride (CE-GaN).
The blue LED, made with 470-nm indium gallium nitride, is 0.37 in.
Albany, NY, February 06, 2013 --(PR.com)-- TechNavio's analysts forecast the Global Gallium Nitride Semiconductor Devices market to grow at a CAGR of 18 percent over the period 2012-2016.
Efficient Power Conversion Corporation (EPC) announced the availability of two development boards, the EPC9003 and the EPC9006, both featuring EPC's enhancement-mode gallium nitride (eGaN) field effect transistors (FETs).
However, this has extended to include silicon carbide (SiC), gallium nitride on silicon (GaN-on-Si), gallium nitride (GaN), and gallium arsenide (GaAs), which offer improved performance.
TELECOMWORLDWIRE-March 17, 2011-Microsemi unveils enhancement mode Gallium Nitride FETs(C)1994-2011 M2 COMMUNICATIONS http://www.m2.com
E.g., they consist of such materials as silicon carbide, gallium nitride, or diamond rather than simply silicon.
Tokyo, Japan, Aug 18, 2006 - (JCN Newswire) - NEC Corporation today announced the successful development of a compact gallium nitride (GaN, 1*) power transistor amplifier, which boasts the world's highest output power level of 400W while featuring low-distortion characteristics, for third generation (3G) base stations.
Touted as possibly the most important semiconductor material since silicon, gallium nitride (GaN) continues to provide a source of undetermined potential to the industry with its inherent optoelectonic properties, particularly in the blue spectrum.