With the advent of heterojunction bipolar transistor
(HBT) and silicon germanium (SiGe) technology, interest in these devices has increased.
In this article, the characteristics of a commercially available SiGe heterojunction bipolar transistor
(HBT) used in an oscillator operating at Ku-band are presented.
Snowden, "Measurement of Heterojunction Bipolar Transistor
Thermal Resistance Based on a Pulsed I-V System," Electronics Letters, Vol.
* ANADIGICS has named Burhan Bayraktaroglu chief scientist, heterojunction bipolar transistor
The semiconductor technologies used for RF power amplifiers in today's wireless telephones have not solidified into a single definitive solution due to the many factors a designer is forced to trade off to simultaneously meet cost, size, performance, modulation scheme and time-to-market requirements now measured in months, Regardless of the semiconductor device technologies used (MESFET, pseudomorphic high electron mobility transistor, GaAs heterojunction bipolar transistor
(HBT), SiGe HBT or Si BJT), amplifier designs must be cost effective and compact, offer competitive performance and be simple to implement.
Heterojunction Bipolar Transistors
for Circuit Design: Microwave Modeling and Parameter Extraction
Chau, "The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors
", IEEE Trans.
WIN is a GaAs-wafer foundry including Avago among its major customers; Visual Photonics is a supplier of GaAs epitaxy wafers and heterojunction bipolar transistors
(HBTs) mostly filling needs of TriQunit and WIN; and Advanced is Taiwan's another GaAs foundry having business with Skyworks.
Kopin is a provider of mobile computing headsets, ultra-small liquid crystal displays and heterojunction bipolar transistors
Material from the symposium focuses on nine areas of interest: heterojunction bipolar transistors
, FET technology, optoelectronics, epitaxy, processing, strain engineering, surfaces and interfaces, germanium and related compounds, and emerging applications.
Providing up do 30 dBm of output power in the frequency range from 2.50 GHz to 2.70 GHz, the MGFS39E2527 amplifier with InGaP Heterojunction Bipolar Transistors
(HBTs) from Mitsubishi offer an integrated power detector for 1.1 V at the amplifier output while a step attenuator controls the output within a range of 18 dB.
TAUNTON - Kopin Corp., a provider of microdisplays for consumer and military electronics, announced plans to enlarge its production facility in Taunton to support its growing demand for its display and heterojunction bipolar transistors