A gallium-nitride (GaN) high-electron-mobility transistor
(HEMT) power amplifier for W-band (75-110 GHz) transmissions has been developed by Fujitsu Limited and Fujitsu Laboratories Ltd.
The SKY67159-396LF single-stage gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor
(pHEMT) LNA available in a compact 2mm x 2mm x 0.
Now, APC Novacom stocks all Cree RF devices that do not need a European Union (EU) license, consisting of gallium nitride (GaN) high-electron-mobility transistor
(HEMT) die, and supports Cree s European market through both volume distribution and small-volume stock for network representatives.
Mitsubishi Electric Corp, Tokyo-based, has formulated the MGFK47G3745 gallium nitride (GaN) high-electron-mobility transistor
(HEMT) Ku-band (12 18GHz) amplifier for satellite earth stations.
All current gallium arsenide (GaAs), metal-semiconductor field effect transistor (MESFET) and high-electron-mobility transistor
(HEMT) devices operate from a positive voltage supply, but need a negative voltage polarity to switch them on.
It uses Agilent second-generation pseudomorphic high-electron-mobility transistor
(PHEMT), advanced silicon bipolar, and film bulk acoustic resonator (FBAR) processes to achieve a flexible, efficient and compact solution.
1) code division multiple access (2) advanced mobile phone service (3) personal communications system (4) pseudomorphic high-electron-mobility transistor
(5) film bulk acoustic resonator
the industry's leading New Product Introduction (NPI) distributor with the widest selection of semiconductors and electronic components, is now stocking the CG2H40xx and CG2H30070 gallium-nitride (GaN) high-electron-mobility transistors
(HEMTs) from Wolfspeed, a Cree company.
These include strain layer properties of high-electron-mobility transistors
and the critical dimension of heat-sink magnetic recording devices, which have a highly polished surface easily damaged by static electricity introduced by SEM studies.