high-electron-mobility transistor


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high-electron-mobility transistor

[′hī i′lek‚trän mō¦bil·əd·ē tran‚zis·tər]
(electronics)
A type of field-effect transistor consisting of gallium arsenide and gallium aluminum arsenide, with a Schottky metal contact on the gallium aluminum arsenide layer and two ohmic contacts penetrating into the gallium arsenide layer, serving as the gate, source, and drain respectively. Abbreviated HEMT. Also known as heterojunction field-effect transistor (HFET); modulation-doped field-effect transistor (MODFET); selectively doped heterojunction transistor (SDHT); two-dimensional electron gas field-effect transistor (TEGFET).
References in periodicals archive ?
Yuan, "Demonstration and dynamic analysis of trapping of hot electrons at gate edge model for current collapse and gate lag in GaN-based high-electron-mobility transistor including self-heating effect," Applied Physics Letters, vol.
The turret of the filming helicopter for Escape Plan used an S-band linear power amplifier that included a Gallium Nitride (GaN) high-electron-mobility transistor (HEMT).
Regan et al., "Ultrahigh-speed GaN high-electron-mobility transistors with fTfmax of 454/444 GHz," IEEE Electron Device Letters, vol.
Danesin et al., "Reliability of GaN high-electron-mobility transistors: State of the art and perspectives," IEEE Transactions on Device and Materials Reliability, vol.
These include strain layer properties of high-electron-mobility transistors and the critical dimension of heat-sink magnetic recording devices, which have a highly polished surface easily damaged by static electricity introduced by SEM studies.
Lu, "Two-dimensional transient simulations of drain lag and current collapse in GaN-based high-electron-mobility transistors," Journal of Applied Physics, vol.

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