hole conduction

hole conduction

[′hōl kən¦dək·shən]
(electronics)
Conduction occurring in a semiconductor when electrons move into holes under the influence of an applied voltage and thereby create new holes.
References in periodicals archive ?
In the low frequency range the increase in [epsilon]' with the decrease in frequency is characteristic of electrical conduction, either by impurity electron and hole conduction, or ionic conduction.
As mentioned above, there are three primary different approaches that have been investigated to generate appreciable hole conduction in ZnO at room temperature: substitution of Group IA impurities on the Zn sublattice, codoping of donors and acceptors, and substitution of Group VA impurities on the O sublattice.
Such weak p-type behavior is not anticipated to yield substantial hole conduction at room temperature.
Ionization energies of 0.33 [40], ~0.4 [37, 46], and 1.3 eV [47] have been predicted, none of which would be compatible with appreciable hole conduction at room temperature.
The observation of hole conduction in As-doped ZnO however is contrary to the predictions of Park et al.
The acceptor ionization energy assigned (using the method described by Wang and Giles [48]) to the [V.sub.Zn]-[N.sub.O]-[H.sup.+] complex is 134 meV, which is sufficiently low to allow appreciable room temperature hole conduction as we reported.