is adversely affected in donor-acceptor composite films, as thin film coating technique such as spin coating on account of fast solvent evaporation do not support well-organized growth of P3HT crystals .
Teherani; Pouya Hashemi, who was an MIT postdoc at the time and is now with IBM; Dimitri Antoniadis, the Ray and Maria Stata Professor of Electrical Engineering; and colleagues at MIT and the University of British Columbia achieved their record-setting hole mobility
by "straining" the germanium in their transistor - forcing its atoms closer together than they'd ordinarily find comfortable.
Dependence of field effect hole mobility
of PPV-based polymer films on the spin casting solvent.
Cost-effective process-induced stress techniques were used to enhance electron and hole mobility
5 times higher hole mobility
into conventional CMOS technology by combining two substrates in the same wafer.
His studies of defects that a silicon germanium layer has on a silicon lattice led to published papers demonstrating an 80% enhancement in electron mobility in NMOS devices and a 40% acceleration of hole mobility
in PMOS devices.
Furthermore, the strain due to the lattice mismatch may be used to improve the hole mobility
in the base parallel to the emitter junction.
6X better hole mobility
than silicon (100) while controlling the threshold voltage in single high-k and metal gate stacks.
Manufactured on rotated substrates, the 65LPe process benefits from an increase in the pMOSFET hole mobility
and saturation velocity without detrimentally affecting the nMOSFET.
Achieved a Record-High Hole Mobility
by Forming an Ultra-Thin Strontium Germanide (SrGex) Interlayer --
Seeking ways to enhance electron and hole mobility
is a major focus for device development at UMC," said Dr.
IBM's SSDOI paper indicated that more than 1% tensile strain is needed to enhance hole mobility
, and we think that this should be visible with TEM analysis", commented James.