Cause of failure was attributed to a non-classical hot carrier
mechanism affecting an NMOS transistor in the sense circuitry.
Steven Louie, a theoretical physicist and senior faculty scientist with Berkeley Lab's Materials Sciences Division, said: "Hot carrier
thermalisa-tion is a major source of efficiency loss in solar cells but because of the sub-picosecond time scale and complex physics involved, characterisation of hot carriers
has long been a challenge.
Some specific topics explored include phononic engineering for hot carrier
solar cells, quantum dot solar cells, and quantum confinement modeling and simulation for quantum well solar cells.
Electronics, physics, materials, and chemistry are among the perspectives of the contributors as they review research into light-emitting diodes (LEDs) and Schottky, or hot carrier
diodes and their design, fabrication, characteristics, and applications.
The demonstration of this hot electron transfer establishes that a highly efficient hot carrier
solar cell is not just a theoretical concept, but an experimental possibility.
However, there needs to be caution, since alterations to these parts of the LDMOS structure may have a negative impact on hot carrier
degradation (resulting in [I.
The qualified tools include the RelPro+(TM) and RelXpert(TM) products for Hot Carrier
Injection (HCI) effects, and the AnalogXpert(TM) product for device mismatch simulation analysis for TSMC's analog/mixed-signal (AMS) process technologies.
Tenders are invited for Hot Carrier
5 Cups Knight Fire .
Specific topics discussed include gate dielectrics, the hot carrier
effect, electromigration, negative bias temperature instability, plasma process-induced damage, and reliability of high-k gate dielectrics.
The tool includes modeling of key degradation mechanisms, such as Hot Carrier
Injection (HCI) for MOSFETs and reverse-beta degradation for SiGe NPN transistors.
The effects of Ge composition and Si cap thickness on hot carrier
reliability of Si/Si1-xGex/Si p-MOSFETs with high-k/metal gate - explores MOSFET performance characteristics and reliability under the effects of controlled stress, which is a common approach to boost performance in CMOS devices
Finally, imec introduced junction-less high-k metal-gate-all-around nanowires to improve on- and off-state hot carrier