indium antimonide


Also found in: Wikipedia.

indium antimonide

[′in·dē·əm ‚an′tim·ə‚nīd]
(inorganic chemistry)
InSb Crystals that melt at 535°C; an intermetallic compound having semiconductor properties and the highest room-temperature electron mobility of any known material; used in Hall-effect and magnetoresistive devices and as an infrared detector.
References in periodicals archive ?
As a member of the III-V compound semiconductors family, the growth of ultrathin films of indium antimonide has attracted a great deal of attention for its use in mid-wavelength infrared detectors (viz., thermal imaging cameras and forward looking infrared systems), magnetic sensors, magneto-resistors, field-effect transistors, photoconductors, and high-speed electronic devices [1-33].
Experimenters used indium antimonide nanowires to create a transistor-like device that could transform the electrons from a current applied to it into holes--literally empty spaces left when electrons are taken out.
Based on the material by which they are formed, the SWIR market is segmented into indium gallium arsenide (InGaAs), mercury cadmium telluride, lead sulfide, and indium antimonide. All these materials can operate in the spectral range of SWIR (0.9 um to 3 um) with great efficiency.
His solution was to take a piece of the semiconductor indium antimonide and shape it into a lopsided tuning fork.
The majority of thermographic cooled cameras on the market today use a detector made from indium antimonide (InSb).
Each model contains a cooled indium antimonide (InSb) detector, which enhances the sensitivity of each camera to detect even the smallest gas emissions.
This camera incorporates a cooled indium antimonide detector that operates in the 3- to 5-pm waveband.
Lv, "Three-dimensional modeling and simulation of large format hybrid indium antimonide detector arrays," Optical Engineering, vol.
Moss, "The interpretation of the properties of indium antimonide," Proceedings of the Physical Society B, vol.
As QWIP photodetector technology is at an early stage of development, the relatively new type-II InAS/Galnsb (Indium Antimonide/Gallium Indium Antimonide) super lattice structure has potential to be an alternative to MCT in the long wavelength spectrum.
Sensing technologies are expected to go beyond the traditional principles of piezoresistive, capacitive, and inductive, while emerging sensor materials such as silicon carbide (SiC), carbon nanotube (CNT) and indium antimonide have enabled sensor penetration into new applications.