indium phosphide


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indium phosphide

[′in·dē·əm ′fäs‚fīd]
(inorganic chemistry)
InP A metallic mass that is brittle and melts at 1070°C; an intermetallic compound having semiconductor properties.
References in periodicals archive ?
Saito et al., "Submicron InP/InGaAs composite channel MOSFETs with selectively regrown N+-source/drain buried in channel undercut," in Proceedings of the 22nd International Conference on Indium Phosphide and Related Materials (IPRM '10), pp.
AXT designs, develops, manufactures and distributes high-performance compound and single element semiconductor substrates comprising gallium arsenide, indium phosphide and germanium through its manufacturing facilities in Beijing, China.
(3) Indium phosphide high electron-mobility transistor (InP HEMT):Invented in 1979 by Fujitsu Laboratories researcher Takashi Mimura (currently a Fellow at Fujitsu Laboratories), this is a transistor made of compound semiconductors featuring excellent speed and noise characteristics.
The indium phosphide nanowires used only 10 percent of the material needed to produce sheets of PV material.
NanoMarkets expects that the PV industry will start to use more indium phosphide (InP) as the industry seeks out next-generation PV technologies.
Specific topics include the in-situ assessment of macro-pore growth in low-doped n-type silicon, novel morphology-dependent ferromagnetic behavior of meso-porous silicon, electric field effects on the formation of isolated macro-porous silicon, resonant energy transfer from porous silicon to iodine molecules, stain etching with ferric ion to produce thick porous silicon films, and growing a porous layer on n-type indium phosphide in liquid ammonia.
Instead of using a germanium wafer as the bottom junction of the device, the new design uses compositions of gallium indium phosphide and gallium indium arsenide to split the solar spectrum into three equal parts that are absorbed by each of the cell's three junctions for higher potential efficiencies.
Differences in materials and processing equipment further complicate matters, as many OE devices are fabricated on a variety of substrates, such as indium phosphide, gallium arsenide, gallium nitride and germanium.
Infinera's large-scale photonic integrated circuit (PIC) incorporates 100 Gigabits per second of transmit and receive capacity and the functionality of more than 60 discrete optical components into a pair of indium phosphide chips.
First, it combines Indium Phosphide, a material that emits light when you apply current to it, with silicon, which has the ability to see, route, and amplify light.
Typically, manufacturers create microchip lasers from exotic--and expensive--semiconductor compounds such as gallium arsenide or indium phosphide. Such compounds readily convert electricity to light, whereas silicon tends to generate heat.
THE most common materials used by the company are silicon and germanium, but other materials such as indium antimonide, gallium arsenide and indium phosphide can be specified.