insulated-gate bipolar transistor


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insulated-gate bipolar transistor

[¦in·sə‚lād·əd‚gāt bī‚pō·lər tran′zis·tər]
(electronics)
A power semiconductor device that combines low forward voltage drop, gate-controlled turnoff, and high switching speed. It structurally resembles a vertically diffused MOSFET, featuring a double diffusion of a p-type region and an n-type region, but differs from the MOSFET in the use of a p + substrate layer (in the case of an n-channel device) for the drain. The effect is to change the transistor into a bipolar device, as this p-type region injects holes into the n-type drift region. Abbreviated IGBT.
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Equipped with insulated-gate bipolar transistor (IGBT) based propulsion technology, these locomotives will be compliant with Indian standards of freight transport and will have the ability to endure tough Indian climate and conditions.
The systems' insulated-gate bipolar transistor (IGBT) inverter technology assures high-efficiency UPS operation, reducing cooling costs and lengthening UPS service life.
They have retained the basic physics of classic devices and added material on such areas of contemporary interest as three-dimensional MOSFETs (metal-oxide-semiconductor field-effect transistors), nonvolatile memory, modulation-doped field effect transistor, single-electron transistor, resonant-tunneling diode, insulated-gate bipolar transistor, quantum cascade laser, and semiconductor sensors.
The Information Network sees insulated-gate bipolar transistor (IGBT) and power metal-oxide-semiconductor field-effect transistor (MOSFET) as the main growth drivers of the overall power semiconductor market.
1) Insulated-Gate Bipolar Transistor (IGBT) Automatic Self Protection: The IGBT, which works under high voltage and high power conditions, can Electrified Coil be destroyed by excess voltage, proliferated current, or excess temperature.
to collaborate on insulated-gate bipolar transistor (IGBT) technology and products for hybrid electric and electric vehicles (HEV and EV).
However, the ratings of self-commutating switches such as the Insulated-Gate Bipolar Transistor (IGBT) and Integrated Gate-Commutated Thyristor (IGCT), are reaching levels that make the technology possible for very high power applications.
4-amp-output half-bridge gate drive optocoupler designed specifically for low-power (up to 25A) motor-control-inverter applications, such as air conditioners and washing machines using inverters based on insulated-gate bipolar transistor (IGBTs).
According to the complaint, the merged company would have a combined share of over 60 percent in the worldwide market for Insulated-Gate Bipolar Transistors specifically designed and calibrated for automotive ignition systems, or Ignition IGBTs.
Specifically designed for the harsh conditions of traction applications, the frequency inverter is equipped with the latest generation of insulated-gate bipolar transistors (IGBTs) for voltages up to 6.
Large three-phase inverters with power ratings above 500W generally drive the demand for high-power discrete semiconductors, such as insulated-gate bipolar transistors (IGBTs), because of their better performance at high temperatures.
These SiC Power MOSFETs are the next step vs traditional silicon metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs), for all applications in power conversion running at a frequency ≥ 100 kHz.

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