velocity of sound alongwith tuning fork,thermometer and padded hammer,Battery eliminator,Milliammeter,Rheostat various types,p-n junction diode
,Digital multimeter,Scientific calculator,Common Physical Balance,
Specific topics include semiconductor physics, the p-n junction diode
, photon emission and absorption, solar cells, light emitting diodes, and organic semiconductors, OLEDS, and solar cells.
Some paper subjects are defect analysis in semiconductor materials based on p-n junction diode
characteristics, electronic structure and doping effects of Ni and Co on a kink in the edge dislocation of BCC iron, peculiarities of discontinuous precipitation in the Pb-Sn alloy, and local vibrational modes of Zn-H-P in GaP, InP, and ZnTe.
To create a p-n junction diode
, the researchers work with materials at 55,000 times atmospheric pressure and at temperatures close to 1,700|C.
Limited tender are invited for supply of Materials for Physics Laboratory-Searle s Goniometer Apparatus Kit ,UJT Characteristic Kit ,BJTCharacteristic Kit,FETCharacteristic Kit,e/m by Thomson Method Kit,Ballistic Galvanometer Kit ,Y-by Koening method Ki,Thermal expansion coefficient Kit,Thermocouple Kit,High Resistance by Leakage Kit ,Logic Gate Experiment (using discrete components) Kit ,Spectrometer ,Weighing Machine,Digital Multi-meter ,Digital Stop Clock ,Analog Stop Clock ,Fixed volume Glass Pipette(25 ml , 27 ) ,Sucker Bulb ,Test Tube Holder ,PN- Junction Diode
(On board) ,Mercury Lamp Box (fitted with chowk)
BALL Semiconductor recently announced that it had proven its diffusion, deposition, ultra-high temperature, and no-contact processes through characterization testing of a metal-oxide semiconductor diode and a p-n junction diode
built on the surface of a sphere.
BALL Semiconductor conducted characterization testing of a metal-oxide semiconductor (MOS) diode and a P/N junction diode
built on the surface of a sphere to prove its diffusion, deposition, high temperature and floating processes.
International Radiation Silicon Junction Diode
The p-n junction diode
forms the basis for nearly all electronics and therefore, its quality is often a good predictor of the performance of a semiconductor device.
In contrast to a conventional p-n junction diode
, Schottky-barrier diodes carry current only by majority carriers (electrons).
Utilizing a low cost IC wafer process, the Super Barrier Rectifier(TM) technology uses a MOS cellular design to replace standard traditional Schottky or PN junction diodes
P-N junction diodes
were fabricated on samples obtained from two different wafers; (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition.