junction diode

junction diode

[′jəŋk·shən ¦dī‚ōd]
(electronics)
A semiconductor diode in which the rectifying characteristics occur at an alloy, diffused, electrochemical, or grown junction between n-type and p-type semiconductor materials. Also known as junction rectifier.
References in periodicals archive ?
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Specific topics include semiconductor physics, the p-n junction diode, photon emission and absorption, solar cells, light emitting diodes, and organic semiconductors, OLEDS, and solar cells.
Some paper subjects are defect analysis in semiconductor materials based on p-n junction diode characteristics, electronic structure and doping effects of Ni and Co on a kink in the edge dislocation of BCC iron, peculiarities of discontinuous precipitation in the Pb-Sn alloy, and local vibrational modes of Zn-H-P in GaP, InP, and ZnTe.
To create a p-n junction diode, the researchers work with materials at 55,000 times atmospheric pressure and at temperatures close to 1,700|C.
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BALL Semiconductor recently announced that it had proven its diffusion, deposition, ultra-high temperature, and no-contact processes through characterization testing of a metal-oxide semiconductor diode and a p-n junction diode built on the surface of a sphere.
BALL Semiconductor conducted characterization testing of a metal-oxide semiconductor (MOS) diode and a P/N junction diode built on the surface of a sphere to prove its diffusion, deposition, high temperature and floating processes.
International Radiation Silicon Junction Diode Absolute
The p-n junction diode forms the basis for nearly all electronics and therefore, its quality is often a good predictor of the performance of a semiconductor device.
In contrast to a conventional p-n junction diode, Schottky-barrier diodes carry current only by majority carriers (electrons).
Utilizing a low cost IC wafer process, the Super Barrier Rectifier(TM) technology uses a MOS cellular design to replace standard traditional Schottky or PN junction diodes.
P-N junction diodes were fabricated on samples obtained from two different wafers; (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition.