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This SiC Junction Transistor SPICE model adds to GeneSiC's comprehensive suite of design support tools, technical documentation, and reliability information to provide power electronics engineers with the design resources necessary to implement GeneSiC's comprehensive family of SiC Junction Transistors and Rectifiers into the next generation of power systems.
GeneSiC has the largest portfolio of commercial SiC diodes, offering a best in class SiC switch, the Super Junction Transistor (SJT), which will revolutionize IGBT and FET designs for engineers who have been looking for higher performance.
Chapters have been added on 10D multirate and directional filter banks; on nonlinear filtering using statistical signal models and for image denoising; and on video demosaicking filters, and the chapters on linear and bilinear operators and matrices, passive circuit elements, bipolar junction transistor amplifiers, and symbolic analysis are among those that have been substantially revised.
Committed to providing solutions and support to designers that lead to opportunities for success, Fairchild will demonstrate the company's high performance SiC bipolar junction transistor (BJT) technology that enables higher efficiency and higher power density for applications such as solar inverters, welding systems, and mobile power.
The introduction of these 21 bipolar junction transistor components exemplifies Diodes' flexibility, as it continues its expansion into the medium-power bipolar transistor market.
These new temperature sensors and fan controllers all contain Automatic Beta Compensation that meet Bipolar Junction Transistor (BJT) or transistor model measurement standards necessary for cutting edge geometries.
Following the introduction of a technology exploiting a bipolar junction transistor (BJT) operation, capacitor-less RAM cells are now well suited to replace standalone DRAM cells in sub 50nm memories.
The introduction of these 19 bipolar junction transistor components exemplifies the Company's flexibility, as it enters into the medium power bipolar transistor market.
In February 1956, William Bradford Shockley, inventor of the junction transistor and Nobel Prize winner, joined Arnold O.
32 um2 Phase-Change Memory cell using a Bipolar Junction Transistor as selector and integrated into a 3V 0.
Karris covers basic electronic concepts and signals, semiconductor electronics, diodes, bipolar junction transistors, field effect transistors and PNPN devices, operational amplifiers, integrated circuits, pulse circuits and waveforms generators, frequency characteristics of single-stage and cascaded amplifiers, tuned amplifiers, sinusoidal oscillators, compensated attenuators, and more.