junction transistor


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junction transistor

[′jəŋk·shən tran¦zis·tər]
(electronics)
A transistor in which emitter and collector barriers are formed between semiconductor regions of opposite conductivity type.
References in periodicals archive ?
SiC Junction Transistors have significantly different characteristics than other SiC Transistor technologies, as well as Silicon Transistors.
The junctions of the present-day bipolar junction transistors including those used in the differential amplifiers usually operate at high-current density, which corresponds to high-level injection of minority carriers [5].
DALLAS -- Diodes Incorporated (Nasdaq: DIOD), a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete and analog semiconductor markets, today announced the release of 21 medium-power bipolar junction transistors in its SOT89-3L package.
These new temperature sensors and fan controllers all contain Automatic Beta Compensation that meet Bipolar Junction Transistor (BJT) or transistor model measurement standards necessary for cutting edge geometries.
Figure 5 compares the measured I-V characteristics of a typical UHF SIT and a typical UHF bipolar junction transistor at 300[degrees]K and 77[degrees]K.
The introduction of these 19 bipolar junction transistor components exemplifies the Company's flexibility, as it enters into the medium power bipolar transistor market.
Among his topics are material properties, ideal specific on-resistance, junction field effect transistors, silicon carbide planar power metal-oxide-semiconductor field-effect-transistors, silicon carbide bipolar junction transistors, and silicon carbide gate turn-off thyristors.
The module that comprises of two 1200V silicon carbide bipolar junction transistors (BJTs) switched 500V at room temperature and 200V at 300C during tests.
However, all of them require big-area diodes or parasitic bipolar junction transistors (BJTs) with turn-on voltage as high as 0.
Electronic circuits, employing bipolar junction transistors biased into the avalanche breakdown region are known for many years [1], [2].
The company's SiC bipolar junction transistors (BJTs) enable good performance over wide temperature intervals, thus improving the efficiency of energy conversion.