magnetoresistivity

magnetoresistivity

[mag‚nēd·ō·ri‚zis′tiv·əd·ē]
(electromagnetism)
The change in resistivity produced in a current-carrying conductor or semiconductor on application of a magnetic field.
References in periodicals archive ?
Luo et al., "Dimensional crossover and anomalous magnetoresistivity of superconducting [Na.sub.x]Co[O.sub.2] single crystals," Physical Review B, vol.
Caption: Figure 2: (a) Magnetoresistivity [[rho].sub.xx] (B) at various [T.sub.L] for sample A.
Resistivity and magnetoresistivity measurements near pe metal- insulator and superconductor-insulator transition in granular Al-Ge.
The determination of the irreversibility line was obtained from magnetoresistivity measurements and conventional magnetization experiments.
This yields the following field dependence of the magnetoresistivity:
In an important work by McCann and coworkers [14], based on earlier work in honeycomb lattices [15], the authors have obtained a general expression for the WL and WAL correction specific to graphene, which determines the dependence of the magnetoresistivity as a function of B involving the scattering parameters [[tau].sub.a] and [[tau].sub.e] explicitly.
permalloy--nickel-iron magnetic alloy) have electric resistivity dependence on strength and direction of magnetic field (angle and magnitude of H vector) applied, which is called anisotropic magnetoresistivity. Sensors employing this property to measure strength of magnetic field are called AMR sensors [1], [2].
This huge increase in the carrier mobility, which has been given the name "colossal magnetoresistivity" (CMR), is both of scientific and technological interest.
The colossal magnetoresistivity originates from a magnetically driven insulator-metal transition, where the magnetic, electronic, and structural degrees of freedom are intimately intertwined.
In torque magnetometry experiments it is defined as the field below which vortices appear in the sample; in magnetoresistivity measurements [H.sub.c2] is defined as the field at which the temperature dependent resistance is 90% of the normal state resistance [12].