metal semiconductor field-effect transistor

metal semiconductor field-effect transistor

[′med·əl ′sem·i·kən‚dək·tər ′fēld i‚fekt tran′zis·tər]
(electronics)
A field-effect transistor that uses a thin film of gallium arsenide, with a Schottky barrier gate formed by depositing a layer of metal directly onto the surface of the film. Abbreviated MESFET.