metal-nitride-oxide semiconductor

metal-nitride-oxide semiconductor

[′med·əl ¦nī‚trīd ¦äk‚sīd ′sem·i·kən‚dək·tər]
(solid-state physics)
A semiconductor structure that has a double insulating layer; typically, a layer of silicon dioxide (SiO2) is nearest the silicon substrate, with a layer of silicon nitride (Si3N4) over it. Abbreviated MNOS.
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