metal-organic chemical vapor deposition


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metal-organic chemical vapor deposition

[′med·əl ȯr′gan·ik ′kem·ə·kəl ′vā·pər ‚dep·ə′zish·ən]
(solid-state physics)
A technique for growing thin layers of compound semiconductors in which metal organic compounds, having the formula MRx , where M is a group III metal and R is an organic radical, are decomposed near the surface of a heated substrate wafer, in the presence of a hydride of a group V element. Abbreviated MOCVD.
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The stress in the films often results from epitaxy in the growth processes and from thermal expansion coefficient (TEC) mismatch in the postgrowth processes of both metal-organic chemical vapor deposition and hydride vapor phase epitaxy.
The films are deposited by metal-organic chemical vapor deposition (MOCVD) that must take place at low substrate temperatures because of processing constraints in device fabrication.

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