metallization layer

metallization layer

The top layers of a chip that interconnect the transistors and resistors. There are usually two to four such layers made of aluminum that are separated by a silicon dioxide insulation layer. See copper chip.
References in periodicals archive ?
Furthermore, W/O/W and O/W/O double emulsions were generated using pattern wettability to reflect its efficiency [7].To the best of the author's knowledge, there are minimal studies been done towards the relationships between the process parameters and the wettability effect, hence this paper studies the relationship between controllable process parameters and wetability of the etched Platinum metallization layer after Reactive Ion Etching (RIE).
This cell is built up using thick-film production techniques, in which an array of fine current-collector fingers are deposited on the top side of the substrate, an aluminum metallization layer applied to the bottom side, and then a series of wider bus bars created for electrical interconnection purposes.
Measurements of thermal expansion of a thin Al metallization layer of 3 [micro]m thickness were carried out on Si substrates with 300 [micro]m thickness for different industrial chips, which were prepared from the commercial modules after removing the bonding wires.
As a result of diffusion of these elements compaction of the upper metallization layer occurs.
4.5 [micro]m, gold metallization layer. These two additions provide the MLP advantages.
It applies a new metallization layer to reroute device leads to the edge of the device and then tests and thins the wafer.
The MLP process differs from a more standard wafer processing in that it incorporates the addition of a second low dielectric constant polyimide layer and a second thick gold metallization layer. The additional polyimide layer offers the flexibility to locate transmission lines on polyimide up to 10 [micro]m thick.
An imaging version of the same instrument lets you see inhomogeneities that are buried underneath opaque films, such as a metallization layer.
The plasma FIB and proprietary Dx chemistry is used to expose metallization layers, allowing electrical fault isolation and analysis to be performed with the vendor's nanoprobing tools.
The 45-nm SOI process offers four transistor options (Regular, High Vt, Super High Vt, Ultra High Vt), in addition to up to 11 metallization layers. A range of SRAM (Static Random Access Memory) and embedded DRAM (Dynamic Random Access Memory) options are also available, as well as a number of ESD (Electrostatic Discharge) protection options and high-quality passive elements.
The circuit definition is completed by adding the metallization layers, including metal conductivity and thickness, to the substrate structure.