minority carrier


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minority carrier

[mə′när·əd·ē ′kar·ē·ər]
(solid-state physics)
The type of carrier, electron, or hole that constitutes less than half the total number of carriers in a semiconductor.
References in periodicals archive ?
The metal impurities (Fe, Cu, and Ni) lead to a decrease of minority carrier lifetime, reducing the light-generated current.
The bigger nanowire diameter means longer minority carrier diffusing length.
The voltage across the diode still grows till the time [t.sub.2], when the concentration of minority carrier charge in the area of PN junction reaches its steady state.
The small response time in the second case could be related to the long diffusion of the minority carrier that appeared in the large width of the depletion layer (W) case which is related directly to the diffusion time and mobility of these carriers which reduce the response of the manufactured device.
The total current I, starting the flow from the anode region 1 p and reaching the cathode region [n.sub.2] is influenced by the integral coefficient of the majority carriers (holes for pnpn structures and electrons for the npnp structures) injection of junction J1, by the integral transfer coefficient of the minority carriers (holes for pnpn structures and electrons for the npnp structures) through wide base, and by the avalanche multiplication of charge carriers, taking place in the collector junction at relatively high forward voltages.
This relative minimum occurs because of the reduction of minority carrier (electron) scattering from plasmons associated with majority carriers (holes) and because of the removal of majority carriers (holes) from scattering the minority carriers (electrons) due to the Pauli exclusion principle for the majority carriers (holes).
The EQE degradation is in fact reproduced by accounting for a reduction of minority carrier lifetime in the doped regions, with fitted SRH lifetimes of 500 ps in the emitter of the R5 sample and 50 ps (emitter)/200 ps (base) for the R4 sample.
where [[tau].sub.p] is the minority carrier lifetime, J is a forward current through the diode, k is Boltzmann constant, T is the temperature, and q is electron charge.
Contract award: supply, delivery, installation and commissioning of a Measurement System capable of performing minority carrier lifetime and light beam induced current measurements on semiconductor material, for the setting up of a Solar Laboratory at the University of Malta.
The topics include a hydrogenated nanocrystalline silicon-based solar cell with 13.6% stable efficiency, light-trapping in thin-film silicon solar cells with a combination of periodic and randomly textured back-reflectors, light filtering devices using background wavelength processing techniques, a decrease in the minority carrier lifetime of crystalline silicon caused by rapid heating, and forming aluminum oxide films on silicon surfaces by aluminum evaporation in an oxygen gas atmosphere.
The injection level is ratio of excess minority carrier concentration to equilibrium majority carrier concentration [1]-[3].
In this work, the interface characteristics of the interface-trapped charge density ([N.sub.it]), the interface-trapped charge density per area and energy ([D.sub.it]), the effective capture cross-section ([[sigma].sub.s]) of surface states, the surface recombination velocity ([s.sub.o]), and the minority carrier lifetime ([[tau].sub.FIJ]) are identified.

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