Forchel, "Growth of self-organized GaSb islands on a GaAs surface by molecular beam epitaxy
," Journal of Applied Physics, vol.
Cirlin et al., "Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy
: structural and optical characterization," Nanotechnology, vol.
 reported the SE study at room temperature for an InSb/GaAs grown by molecular beam epitaxy
, showing similar critical energy points from InSb.
Franchi, "Molecular beam epitaxy
: an overview," in Reference Module in Materials Science and Materials Engineering, S.
Molecular beam epitaxy
is the process of depositing atoms or molecules onto a crystalline substrate under conditions of high or ultra-high vacuum.
11 June 2012 a[euro]" British semiconductor wafer products supplier IQE Plc (LON:IQE) said on Monday it had wrapped up the takeover of US sector company RF Micro Devices Inca[euro](tm)s (NASDAQ:RFMD) entire molecular beam epitaxy
(MBE) epi-wafer production business.
Brookhaven physicist Ivan Bozovic, one of the lead authors on the paper used a specialized atomic-layer-by-layer molecular beam epitaxy
method to assemble lanthanum-copper-oxide samples with varying numbers of layers.
Among specific topics are domain wall engineering in lead-free piezoelectric materials, fabricating dielectric/conductive hybrid artificial superlattices using the molecular beam epitaxy
method, zinc self-diffusion in isotopic heterostructures zinc oxide thin films, electrical properties of conductive paste with silver nanoparticles and its application to flexible substrates, piezoelectric ceramics for high-temperature applications, the mixed conduction of proton and electron in tungsten phosphate glass and its hydrogen transport, and thermophysical behavior in crystalline halides with temperature.
According to Strategy Analytics, both MOCVD (metal organic chemical vapor deposition) and MBE (molecular beam epitaxy
) epitaxial substrates will continue to be used for the production of HBT (heterojunction bipolar transistor) and HEMT (high electron mobility transistor) devices.
The scientists used molecular beam epitaxy
to grow artificial superlattices of the antiferromagnetic heavy fermion compound [CeIn.sub.3] and the conventional metal [LaIn.sub.3].
The CRADA, designed to develop EPIR's MCT process on more commercially viable and scalable Si substrates, is to qualify MCT material grown by molecular beam epitaxy
(MBE) at EPIR for use in the production of IR detectors and read-out integrated circuit chips for IR cameras by BAE Systems.