molecular-beam epitaxy


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molecular-beam epitaxy

[mə′lek·yə·lər¦bēm ′ep·ə‚tak·sē]
(solid-state physics)
A technique of growing single crystals in which beams of atoms or molecules are made to strike a single-crystalline substrate in a vacuum, giving rise to crystals whose crystallographic orientation is related to that of the substrate. Abbreviated MBE.
References in periodicals archive ?
Florez, "Application of reflectance difference spectroscopy to molecular-beam epitaxy growth of GaAs and AlAs," Journal of Vacuum Science & Technology A, vol.
Chuang et al., "Effect of N to Ga flux ratio on the GaN surface morphologies grown at high temperature by plasma-assisted molecular-beam epitaxy," Journal of Applied Physics, vol.
They then used a technique called molecular-beam epitaxy to add one extra monolayer of iron oxide to every 10 atomic repeats of the single-single monolayer pattern.
The School of Physics and Astronomy requires new capability for thin-film growth by molecular-beam epitaxy.
Massies, "High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy," Applied Physics Letters, vol.
Previous works have demonstrated that, in not-intentionally doped (NID) GaN layers, an obvious lower substrate temperature is necessary to obtain a pure cubic phase rather than that of a pure hexagonal phase by metal organic chemical vapor deposition (MOCVD) or molecular-beam epitaxy (MBE) [8, 11-13].
Eaglesham, "Semiconductor molecular-beam epitaxy at low temperatures," Journal of Applied Physics, vol.
Eastman, "Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy," Applied Physics Letters, vol.
Among their topics are molecular-beam epitaxy, conductivity and chemical trends, optical properties, ellipsometry, theory of InN surfaces, InN-based dilute magnetic semiconductors, and nanocolumns.
By using an atom-deposition technique called molecular-beam epitaxy and by exploiting a tendency of indium atoms to bunch together, the researchers covered an entire chip with triangular arrays of exactly six indium atoms per patch of silicon 3 nm on a side.
has ordered the company's CTX 9000 DSi explosive detection systems, accessories, engineering and integration systems...Horiba announced it plans to double the number of portable water quality analyzers it produces monthly from 500 to 1000 units to meet increased demand...ThermoQuest announced that the US Centers for Disease Control and Prevention has ordered nine of the company's high-performance mass spectometry systems...Thermo Optek announced that its VG Semicon subsidiary has received over $11 million in orders for its multiple molecular-beam epitaxy systems, primarily the V150 MBE system...Zymark has sold an Allegro Combo system for high-throughput screening to Taiho Pharmaceutical...
Ng, "GaAs and InP Selective Molecular-Beam Epitaxy," J.

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