The transfer characteristic in air indicates n-type conduction
with a threshold voltage, [V.sub.TH] of 7.7 V.
For films grown with less than 50% O partial pressure, n-type conduction
was observed, but films grown with 50% and above exhibited p-type behavior that appeared to saturate at 60% O partial pressure.
The Hall measurements revealed that ZnO:YAG exhibits n-type conduction
with an electron concentration of approximately [10.sup.18] [cm.sup.-3].
This shallow donor level, which caused the measured n-type conduction also, dominates the conduction mechanism for the thickest sample S3.
The change from p-type to n-type conduction for thick INZO film was characterized by the photoluminescence and activation energy analysis as the appearance of Zn-related shallow donors.
This is due to the origin of n-type conduction
and the intrinsically low [[kappa].sub.latt], which is highly related to the structural configuration of the interstitial Cu sites in this system.
All specimens showed n-type conduction
, and the carrier concentration of [Mg.sub.2][Si.sub.0.7][Sn.sub.0.3] was approximately 7.4 x [10.sup.16] [cm.sup.-3], which was increased to 1.8 x [10.sup.19] [cm.sup.-3] by excess Mg and Sb doping.