nonvolatile memory

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nonvolatile memory

[¦nän′väl·ə·təl ′mem·rē]
(computer science)
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.

non-volatile memory

Memory chips that hold their content without power being applied. It may refer to chips that are not changeable, such as ROMs and PROMs, or to chips that can be rewritten many times such as flash memory. However, USB flash drives, along with hard drives and solid state drives (SSDs), are non-volatile storage devices, not non-volatile memory. See ROM, PROM, memory types, storage vs. memory and future memory chips.

Two and a Half Cubic Feet Held 32KB
The first widely used RAM employed magnetic cores strung together with multiple wires, and the cores held their content without power. About 30" high, this 32KB Dataram module was for a Data General minicomputer in 1967. See core storage.
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References in periodicals archive ?
Lee, "Ultra-transparent, flexible single-walled carbon nanotube nonvolatile memory device with an oxygen-decorated graphene electrode," Advanced Materials, vol.
Although large number of research have indicated that various kinds of nonvolatile memory properties (WORM and write-read-erase-read) and operation modes (unipolar and bipolar) have been observed in polythiohene-based memory devices, it still cannot provide a satisfactory explanation for the electrical conduction mechanism, because it is much more complex than in ordered inorganic materials, as most polymers are amorphous in nature [10].
Chang, "Temperature and frequency dependence of the ferroelectric characteristics of BaTi[O.sub.3] thin films for nonvolatile memory applications," Applied Physics A, vol.
The CellMite LVDT features nonvolatile memory for parameter and calibration storage.
All device data and device configurations are automatically saved in nonvolatile memory in a HistoROM module in the Promag 200's transmitter housing.
Developments of next generation nonvolatile memory (NVM) devices are required because the physical limitations of traditional Flash memory devices are approaching.
Their topics include the ultraviolet engineering of high-k thin films, structural and electrical characteristics of alternative high-k dielectrics for CMOS applications, interfacial dipole effects on high-k gate stacks, high-k dielectrics in ferroelectric gate field effect transistors for nonvolatile memory applications, and the interaction challenges with novel materials in developing high-performance and low-leakage high-k/metal gate CMOS transistors.
The device is implemented in the company's 55 nm nonvolatile memory (NVM) technology.
The initial voltage appears to strip oxygen atoms from the silicon oxide; lesser charges then repeatedly break and reconnect the circuit and turn it into nonvolatile memory.
The process, dubbed as S65, is a 65-nanometer SONOS embedded nonvolatile memory (NVM) technology, which has been integrated into UMC's standard LL65 process.
It will improve reliability of nonvolatile memory data by implementing new Error Checking and Correcting (ECC) functionality."
Use of the new CAM in combination with existing nonvolatile memory is related to greater non-volatility of CPU for electronics and other storage devices.