ohmic contact


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ohmic contact

[′ō·mik ′kän‚takt]
(electricity)
A region where two materials are in contact, which has the property that the current flowing through it is proportional to the potential difference across it.
References in periodicals archive ?
Such contacting method provided mechanically stable ohmic contact to the sample, which was then verified by thermal cycling over a wide range of temperatures.
They obtained a low ohmic contact resistance of 700 [OHM] between a multiwalled CNT (MWCNT) and tungsten (W) surface.
In a part of [p.sup.+]n SCs, [n.sup.+]-Si film for back surface field (BSF) as well as ohmic contact with back Ag electrode was grown on the back surface of Si wafer, with a thickness [d.sub.BSF] among 10 to 1000 nm.
To achieve a good ohmic contact, the evaporated Ag was annealed at 500[degrees]C for 30 min.
In order to provide high isolation at higher frequencies, a shunt capacitive switch is provided after each ohmic contact switch.
After opening contact holes, Ti/Al/Ni/Au metal layer for Ohmic contact was deposited and followed by rapid thermal annealing at 850[degrees]C for 30 s in [N.sub.2] ambient.
Yang and his colleagues also use a Z-scheme in their system only they deploy two Earth abundant and stable semiconductors - silicon and titanium oxide - loaded with co-catalysts and with an ohmic contact inserted between them.
First, the influence of the soil and the ohmic contact due to the soles of the shoes on the induced current density distribution is analyzed.
Electrodes on the back of these power devices have two purposes: To make ohmic contact with Si substrates and to provide solder joints with heat sink substrates.
(Titanium provides a stable ohmic contact when deposited directly on silicon and alloys to it forming a titanium silicide.)
Contact resistivity is dependent on doping density, and it prevents the formation of good ohmic contact because of surface state Fermi level pinning except the heavily doped regions in semiconductor.