oxide isolation

oxide isolation

[′äk‚sīd ‚ī·sə′lā·shən]
(electronics)
Isolation of the elements of an integrated circuit by forming a layer of silicon oxide around each element.
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.
References in periodicals archive ?
Complete oxide isolation of the active devices from the substrate eliminates the substrate current injection path.
SOI technology provides the proper device isolation because complete oxide isolation between devices essentially cuts off all direct paths of substrate injection noise and a near intrinsic substrate further reduces the capacitive coupling through the substrate.
In addition, they offer improved thermal properties because LDMOS devices do not require a beryllium oxide isolation layer in the package.