On the other hand, due to the accumulation of negative charges on the silicon surface, the fixed negative charges repel the electrons moving from the P-type silicon
side and simultaneously attract the positive charges, thus reducing the number of electrons and holes.
Figure 2 shows X-ray diffraction patterns of (100)-oriented AlN thin films for different distance between the Al target and substrate on a p-type silicon
In spite of the definite advantages of n-type silicon, p-type silicon
comprises 85% of industrial silicon solar cells.
Single crystalline boron-doped p-type silicon
with resistivity of 10 [ohm]-cm was used as the substrate, which was etched with HCl for 5 min before deposition.
Asomoza, "Plasma CVD deposited p-type silicon
oxide wide-bandgap material for solar cells," Solar Energy Materials and Solar Cells, vol.
(100) as substrates was cut with the size that is 1.5 cm x 2.0 cm and clean with acetone, methanol, and HF (48% HF: DI water (1: 10)).
Commercially, p-type silicon
substrates are used as a common photovoltaic (PV) material and occupy a large majority of the PV market sales.
For the solar cell fabrication, n-type emitter was generated by doping the p-type silicon
with phosphorus oxychloride (PO[Cl.sub.3]) diffusion at the temperature 845[degrees]C forming a p-n junction underlying the nanowires.
Wang, "Design optimization of bifacial HIT solar cells on p-type silicon
substrates by simulation," Solar Energy Materials and Solar Cells, vol.
The p-type silicon
base is around 300 [micro]m thick whereas the n-type emitter is around 100 nm thick.
Plasma-enhanced chemical vapor deposition (PECVD) was used to deposit 10 bilayers (nominal thickness 1.5 nm of each layer) of alternative layer of Si-rich Si[O.sub.2] (SRO) and Si[O.sub.2] on <100> 10 ohm cm p-type silicon
The full Al-BSF forms a good ohmic contact; however, the rear surface passivation is moderate on p-type silicon
substrates [1, 2].