p-type silicon


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p-type silicon

[′pē ¦tīp ′sil·ə‚kän]
(electronics)
Silicon to which more impurity atoms of acceptor type (with valence of 3, such as boron) than of donor type (with valence of 5, such as phosphorus) have been added, with the result that the hole density exceeds the conduction electron density.
References in periodicals archive ?
On the other hand, due to the accumulation of negative charges on the silicon surface, the fixed negative charges repel the electrons moving from the P-type silicon side and simultaneously attract the positive charges, thus reducing the number of electrons and holes.
Figure 2 shows X-ray diffraction patterns of (100)-oriented AlN thin films for different distance between the Al target and substrate on a p-type silicon substrate.
In spite of the definite advantages of n-type silicon, p-type silicon comprises 85% of industrial silicon solar cells.
Single crystalline boron-doped p-type silicon with resistivity of 10 [ohm]-cm was used as the substrate, which was etched with HCl for 5 min before deposition.
Asomoza, "Plasma CVD deposited p-type silicon oxide wide-bandgap material for solar cells," Solar Energy Materials and Solar Cells, vol.
p-type silicon (100) as substrates was cut with the size that is 1.5 cm x 2.0 cm and clean with acetone, methanol, and HF (48% HF: DI water (1: 10)).
Commercially, p-type silicon substrates are used as a common photovoltaic (PV) material and occupy a large majority of the PV market sales.
For the solar cell fabrication, n-type emitter was generated by doping the p-type silicon with phosphorus oxychloride (PO[Cl.sub.3]) diffusion at the temperature 845[degrees]C forming a p-n junction underlying the nanowires.
Wang, "Design optimization of bifacial HIT solar cells on p-type silicon substrates by simulation," Solar Energy Materials and Solar Cells, vol.
The p-type silicon base is around 300 [micro]m thick whereas the n-type emitter is around 100 nm thick.
Plasma-enhanced chemical vapor deposition (PECVD) was used to deposit 10 bilayers (nominal thickness 1.5 nm of each layer) of alternative layer of Si-rich Si[O.sub.2] (SRO) and Si[O.sub.2] on <100> 10 ohm cm p-type silicon wafer.
The full Al-BSF forms a good ohmic contact; however, the rear surface passivation is moderate on p-type silicon substrates [1, 2].