25 V, respectively, for a near pinch-off voltage
operating region between classes B and C.
This device, designated the IFND89, is well-suited to applications requiring high-gain, low-noise and low pinch-off voltage
(less than .
The E-mode device features a nominal +350 mV pinch-off voltage
and corresponding [I.
P] represents pinch-off voltage
and GAM is the pinch-off slope parameter.
The peak reverse voltage across the gate must be taken into account if the MESFET is being biased much below pinch-off voltage
(that is if [V.
In Curtice and Ettenberg (1), this is described as a shift in pinch-off voltage
, but it could also be called a kind of sub-threshold conduction.
Increasing the pinch-off voltage
or decreasing the open channel current by increasing the channel height and/or width increases the intercept point performance of the device.
These devices offer high gate-drain and gate-source breakdown voltages, near-constant transconductance with gate bias down to pinch-off voltage
and moderately high maximum channel current that enables high efficiency to be obtained.
As a result, the drain-source resistance increases and the channel resistance becomes very large when the bias voltage reaches pinch-off voltage
An additional transistor circuit is integrated on chip, which delivers a voltage proportional to the actual pinch-off voltage
In the off-state, the gate of the transistor is DC biased well beyond the channel pinch-off voltage
so that the channel is fully depleted of carriers.
ds~ are the gate-source bias voltage, the pinch-off voltage
and the drain-source bias current, respectively.