MOS (Metal oxide Semiconductor)-Varactor is a planar device
, conventionally fabricated in CMOS technology.
With their Trench construction, the IGBTs offer a smaller size than planar devices
, providing higher current density and lower thermal resistance, without compromising performance and reliability.
It describes wave propagation in magneto-dialectric materials, including meter, kilogram, and second and centimeter, gram, and second systems of units, basic definitions and terms, free magnetic energy and wave propagation, wave propagation in ordered magnetic materials, Kramers-Kronig equations, and specialized applications toward planar composite configurations in which electromagnetic waves propagate in a specific direction, with a focus on films, multilayers, and planar devices
Sensors are available in a number of configurations, but the ones most suitable for coatings applications are small, thin planar devices
consisting of two interlocking comb-like electrodes.
Three-dimensional integration is a system level architecture/technology for designing and fabricating complementary metal-oxide semiconductors wherein multiple layers of planar devices
are stacked and vertically interconnected through the silicon substrate.
Unlike conventional semiconductor technologies with planar devices
on the surface of the semiconductor substrate and interconnects only above the planar devices
, this emerging 3D IC technology forms full 3D interconnects below and above the vertical devices.
BeSang's vertical flash memory has been designed and developed to be implemented using BeSang's proprietary single-chip 3D IC since the 3D IC is more efficient with vertical than planar devices
," said Sang-Yun Lee, CEO of BeSang.
With plates for one or more specific latitudes, these sophisticated planar devices
could solve problems involving such things as time, star positions, and length of the day merely by rotating an attached, openwork star map.
FinFET transistors are a significant change from planar devices
The Livingston facility includes one of the most advanced production lines in the world for WDM planar devices
, and operations will be transferred without disruption.
The new 55V planar devices
are available as standard and logic level gate drive MOSFETs in N and P channel configuration, and offer a maximum on-state resistance (Rds(on)) as low as 8mOhm.
today announced that it has entered into an agreement with IMEC to join its Industrial Affiliation Program (IIAP) that targets the implementation of high-mobility layers and advanced source/drain engineering solutions in scaled planar devices
as well as to license IMEC's strained silicon technology.