planar device

planar device

[′plā·nər di‚vīs]
(electronics)
A semiconductor device having planar electrodes in parallel planes, made by alternate diffusion of p- and n-type impurities into a substrate.
McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc.
References in periodicals archive ?
Compared with Planar Device. To understand the relationship between optical and potential performance of the core-shell structure, we have simulated the photogeneration rate at Y direction of the planar and radial junction, respectively.
The schematic represents the planar device, while the smaller on the right plot gives the [R.sub.ON]/[R.sub.OFF] ratio.
Conventional systems have many large components, whereas the compact, fully planar device developed at UCSC allows the study of atoms and molecules on a chip-based platform with integrated optics.
The TIM is a planar device composed of a translating center shuttle connected by slender legs on both sides to bond pads anchored to the silicon wafer.
Therefore, the overall optical absorption in organic materials can be significantly enhanced by up to ~51% over that of a planar device without grating.
That approach, however, requires a perfectly planar device presentation to the contactor to ensure that both the force and sense lines make contact.
Designated the WDBR Series, the dynamic braking resistor enables the replacement of bulky wirewound devices with a low-inductance, flameproof, intrinsically safe planar device that is rated for ultra-high temperatures.
"The major advantage of this planar device is that it provides a manifold of intersecting capillaries with minimum dead volumes," says developer Jed Harrison, associate professor of chemistry at the Univ.
imec also presented a study on the reliability of GAA nanowires, showing that the degradation mechanisms and their origins are similar to the one in planar devices. The modeling of the degradation including various channel hot-carrier (CHC) modes as well as positive bias temperature instability (PBTI) allows an extrapolation to 10-year lifetime in the full bias space.
FinFET has several advantages compared to planar devices such as well suppressed short channel effects, reduced subthreshold swing (~70 mV/dec), and small threshold voltage roll-off [3].