power MOSFET


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power MOSFET

A type of metal oxide semiconductor field effect transistor (MOSFET) used to switch large amounts of current. Power MOSFETs use a vertical structure with source and drain terminals at opposite sides of the chip. The vertical orientation eliminates crowding at the gate and offers larger channel widths. In addition, thousands of these transistor "cells" are combined into one in order to handle the high currents and voltage required of such devices.

Following are the common types of power MOSFETs. The last example is a combination MOSFET and bipolar junction transistor (BJT), known as an "insulated gate bipolar transistor" (see IGBT). See MOSFET.


Power MOSFETs
All power MOSFETs use a vertical structure in which the source and drain are at opposite sides of the chip. The last example is a combination of MOSFET and bipolar technologies, which is typically used in higher power applications.
References in periodicals archive ?
Power MOSFET trench technologies, such as OptiMOS-T2, exhibit significant improvement in both RDS(on) and gate charge compared to previous technology.
For these and other low-voltage applications, lower gate voltage power MOSFETs improve the efficiency for extended battery life and reduce the heat dissipation involved in switching the loads.
The RJK60S5DPK power MOSFET is ideal for use in the primary power switching circuit of a power supply unit, which converts alternating current (AC) to direct current (DC).
The increased cell density capable with these photo tools also enabled successful power MOSFETs with a BVDSS range less than 100 V, enabling new automotive, power supply, and motor control applications.
The designs benefit from the company's expertise in smaller package development and higher heat-radiation packages developed through Renesas Electronics' ultrafine power MOSFET technology.
The underside of the device has a die pad that allows heat to pass to the printed wiring board while the power MOSFET is operating and enables the power MOSFET to handle large currents.
Despite its compact size, the NP75N04YUG power MOSFET has a low channel-to-case thermal resistance (Note 1) of 1.
today announced the RJK0383DPA, a dual-type power MOSFET that enables smaller, higher-efficiency synchronous-rectification DC/DC converters for generating various supply voltages in communication devices and laptop PCs.
IXYS will continue to grow the high voltage product line with an ongoing plan to increase the value offered in the Polar Power MOSFET family.
IXYS Corporation (NASDAQ:IXYS) announces the release of a new family of 55V to 100V TrenchMV Power MOSFETs incorporating a proprietary cell design that significantly reduces on-resistance, thereby enabling improved efficiency.
MRF6S21100N: An N-channel, enhancement-mode lateral power MOSFET with output power of 35 dBm, gain of 14.
Backside Metallization with good adhesion and Ohmic contact to the current drain of a power MOSFET is essential for low on-resistance of these devices.