power transistor

power transistor

[′pau̇·ər tran‚zis·tər]
(electronics)
A junction transistor designed to handle high current and power; used chiefly in audio and switching circuits.
References in periodicals archive ?
Tenders are invited for Niq for procurement of rf power transistor
Teledynes ceramic TDG100E15 100V 15A FET and TDG100E30 100V 30A FET both utilize GaN Systems patented Island Technology which is a scalable, vertical charge dissipating system that gives the power transistor ultra-low thermal losses, high power density, no-charge storage, and very high switching speeds.
The highly linear and load tolerant model 5143 is well suited to power transistor testing, wireless component testing and passive intermodulation (PIM) testing.
Panasonic Corporation today announced that it has developed an insulated-gate (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no variation in its threshold voltage.
This task can be particularly challenging when the device is a high power transistor having low input and output impedances.
This device is optimized for high-frequency switching applications, providing a combination of ultra-low switching losses and ultra-fast switching speeds thats unavailable with traditional power transistor solutions.
The converter itself, consisting of an inductance, a power transistor, free wheel diode, the control IC, and a few passive components, provides constant current to the LEDs.
This device is a first step into a new type of power transistor where performance is no longer the only criteria of choice for the user.
iWatt's iW1810 AC/DC digital PWM IC integrates an 800-V bipolar power transistor to protect rugged offline power supplies from high-line surge voltage while maintaining better than 5 percent output voltage regulation and consuming less than 100 mW in standby mode.
Potential growth of many end-user application markets such as next-generation wireless communications, consumer and automotive electronics, as well as computer applications, is expected to boost the power transistor markets.
Providing insulation in high-power RF and microwave power transistor packages as well as electron devices such as inductive output tubes, BeO has a low dielectric constant of 6.7 and a low loss index of 0.0012 at 1 MHz, addressing the increase in losses that occur as frequency increases.
Freescale introduced a 50-V LDMOS RF power transistor line for L-Band radar applications.