Panasonic Corporation today announced that it has developed an insulated-gate (MIS) gallium nitride (GaN) power transistor
capable of continuous stable operation with no variation in its threshold voltage.
Summary: Osaka [Japan], Feb 23 (ANI): Consumer electronics leader Panasonic on Friday announced that they have developed an insulated-gate gallium nitride (GaN) power transistor
, capable of continuous stable operation with no variation in its threshold voltage.
However, to achieve a low-dropout voltage, the aspect ratio of the power transistor
--the last stage--could be greater than 40000 for a load current of 100mA (Lovaraju, et al.
Tokyo, Dec 10, 2009 - (JCN Newswire) - NEC Corporation (NEC) and NEC Electronics Corporation (NECEL) today announced the development of a nitride semiconductor(1) power transistor
on a silicon (Si) substrate that has improved the control and suppression of electrical currents when electrical power is turned off (normally-off characteristics(2)), a necessary feature for the safe operation of consumer electronics and IT devices.
The Inverpower DC (direct current) power delivery systems using power transistor
(Insulated Gate Bipolar Transistor or IGBT) technology was introduced in the late 1990's and is obtaining increasing acceptance in industrial markets, according to SatCon.
Tokyo, Japan, Oct 18, 2005 - (JCNN) - Oki Electric Industry announced on October 17 that it has developed a power transistor
with dramatically improved amplifying characteristics, in collaboration with the Research Center for Micro-Structure Devices at the Nagoya Institute of Technology.
The model PTF 10160 power transistor
features a flat power gain of 16 [pm]0.
com/research/p7t78t/epc2010_gan_200v) has announced the addition of the "EPC2010 GaN 200V Power Transistor
Reverse Costing Analysis" report to their offering.
iWatt's iW1810 AC/DC digital PWM IC integrates an 800-V bipolar power transistor
to protect rugged offline power supplies from high-line surge voltage while maintaining better than 5 percent output voltage regulation and consuming less than 100 mW in standby mode.
is generally known, today announced the development of a Gallium Nitride (GaN) power transistor
with the ultra high breakdown voltage over 10000V.
Broadband and Internet mobile solutions provider NEC Corp has developed a new nitride semiconductor power transistor
The instrument an automated power transistor
switching test system, determines the maximum voltage without destroying the units.