V-shaped defects [5-7] readily form at InGaN/GaN

quantum wells (QWs) having high indium mole fractions, triggered by threading dislocations in the buffer layer.

Son et al., "Surface modifications and optical properties of blue InGaN single

quantum well by in-situ thermal treatments," Physica Status Solidi (C), vol.

Wang, "Observation of large Stark Shift in [Ge.sub.x][Si.sub.1-x]/Si Multiple

Quantum Wells," J.

Gerthsen et al., "Indium redistribution in an InGaN

quantum well induced by electron-beam irradiation in a transmission electron microscope," Applied Physics Letters, vol.

Wang, "Influence of strain relaxation on the optical properties of InGaN/GaN multiple

quantum well nanorods," Journal of Physics D: Applied Physics, vol.

For a classical infinite square

quantum well of width 2L, the solution is known to take the form

The Schrodinger equation is solved variationally by finding <H([rho], [phi], z)> and the binding energy of the donor in a

quantum well wire is given by the difference between the energy with and without the Coulomb interaction.

In order to specify the obtained mnH(L) features, we have solved the one dimensional Schrodinger equation for finite

quantum wells based on the envelope function approximation [23] including the effects of strain.

Zory Jr,

Quantum Well Lasers, Academic Press, San Diego, Calif, USA, 1993.

The same effect has also been observed for

quantum well wires [27].

Pandey and Thomas E George treat the electrons confined in a

quantum well as a kind of gas consisting of electrons moving randomly at various speeds.