V-shaped defects [5-7] readily form at InGaN/GaN quantum wells
(QWs) having high indium mole fractions, triggered by threading dislocations in the buffer layer.
Son et al., "Surface modifications and optical properties of blue InGaN single quantum well
by in-situ thermal treatments," Physica Status Solidi (C), vol.
Wang, "Observation of large Stark Shift in [Ge.sub.x][Si.sub.1-x]/Si Multiple Quantum Wells
Gerthsen et al., "Indium redistribution in an InGaN quantum well
induced by electron-beam irradiation in a transmission electron microscope," Applied Physics Letters, vol.
Wang, "Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well
nanorods," Journal of Physics D: Applied Physics, vol.
For a classical infinite square quantum well
of width 2L, the solution is known to take the form
The Schrodinger equation is solved variationally by finding <H([rho], [phi], z)> and the binding energy of the donor in a quantum well
wire is given by the difference between the energy with and without the Coulomb interaction.
In order to specify the obtained mnH(L) features, we have solved the one dimensional Schrodinger equation for finite quantum wells
based on the envelope function approximation  including the effects of strain.
Zory Jr, Quantum Well
Lasers, Academic Press, San Diego, Calif, USA, 1993.
The same effect has also been observed for quantum well
Pandey and Thomas E George treat the electrons confined in a quantum well
as a kind of gas consisting of electrons moving randomly at various speeds.