Biased for a quiescent point of [I.sub.C] = 9.4 mA and [V.sub.CE] = 4 V, this BJT presents the following set of S-parameters:
Biased for a quiescent point of [I.sub.DS] = 59.1 mA and [V.sub.CE] = 6 V, this MESFET can be described by the following set of S-parameters:
Biased for a quiescent point of [I.sub.DS] = 29.4 mA and [V.sub.DS] = 20 V, this HEMT presents the following set of S-parameters:
Test results for a TGH2910-FL 10 W driver amplifier evaluation board biased at a near class-B quiescent point of 28 V and 30 mA are plotted in Figure 1.
Evaluation board data for a TGH2930-FL 30 W prematched power device biased at a near class-B quiescent point is shown in Figure 2.
It also discusses nonlinear phenomena encountered even in simple oscillators, including the bifurcation of oscillations from a quiescent point
and the bifurcation of almost periodic oscillations from existing periodic oscillations.
So, in that quiescent point, a linear power limit of|16^
These minor nonlinearities are dependent on the device's quiescent point, so it is expected that there may be another point |Q.sub.2^ that optimizes IMD at the expense of some available linear output power limit.
In the third and last scenario, the PA is biased for class AB, a more or less imprecise region of quiescent points
just above the [G.sub.3] null.
When the device is measured starting from different DC quiescent points with the same dissipated power, the data will contain the same thermal information illustrating how the trap effects are related to the bias point.
First, the device was measured under pulsed conditions starting from five different DC quiescent points with the same dissipated power (on the 600 mW-hyperbola), as shown in Figure 7.